TSM4NB60CH X0G Allicdata Electronics
Allicdata Part #:

TSM4NB60CHX0G-ND

Manufacturer Part#:

TSM4NB60CH X0G

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CHANNEL 600V 4A TO251
More Detail: N-Channel 600V 4A (Tc) 50W (Tc) Through Hole TO-25...
DataSheet: TSM4NB60CH X0G datasheetTSM4NB60CH X0G Datasheet/PDF
Quantity: 1000
7500 +: $ 0.21103
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251 (IPAK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TMS4NB60CH X0G is an enhancement-mode lateral N-channel power MOSFET. This particular make and model from STMicroelectronics is designed for high current and voltage applications, primarily in industrial and consumer electronic devices. It offers a total power dissipation of 4W and can support drain-source voltages of up to 60V.

As with many modern transistors, the TMS4NB60CH X0G utilizes an oxide-semiconductor to create a field-effect channel. This channel is what allows current to flow through the transistor when triggered. The oxide-semiconductor layer is sandwiched between the source and drain contacts and can be disrupted by an inputsuch as a voltageat either end. When this potential difference is applied, it changes the electrical fields within the semiconductor and allows the current to flow across.

When the TMS4NB60CH X0G is between its cut-off and saturation voltages (Vgs=VDS=0.8V to 30V, respectively), the device is in its triode region. In this area, the current flow is linearly proportional to the voltage applied to the gate. Outside of this region, the device is considered to be either in its peak or \'ohmic\' region, or in its saturation region.

Applications that make use of the TMS4NB60CH X0G can range from power management in computers or electronics, to power circuitry in automobiles or home appliances. It is well suited to most applications requiring low-voltage, low-resistance, and high-voltage switching. It can also be used in power circuits to provide a means of controlling large currents of up to several amperes. In addition, it can be used as a switching element in electronic circuits for high-efficiency power management.

The TMS4NB60CH X0G’s impressive low-resistance characteristics make it perfect for use in signal processing applications. This makes it a great choice for use in amplifiers and signal switching, as well as for providing high-speed switching for signal transmission in audio, video, and other systems. Furthermore, the stable and efficient switching performance of the TMS4NB60CH X0G, combined with its high-speed performance, makes it ideal for power management in desktop or laptop computers, or even in data processing.

In summary, the TMS4NB60CH X0G is a great choice of power MOSFET, offering low-resistance characteristics, high-speed switching and efficient power management in a wide range of applications. It is particularly well suited to signal processing applications, thanks to its ability to switch quickly and control large currents. Its high voltage handling capabilities make it well suited for a number of industrial and consumer electronic applications, and it is ideal for high-efficiency power management.

This content is provided for informational and educational purposes only and does not necessarily reflect the opinion of STMicroelectronics.

The specific data is subject to PDF, and the above content is for reference

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