TSM4NB60CH X0G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TMS4NB60CH X0G is an enhancement-mode lateral N-channel power MOSFET. This particular make and model from STMicroelectronics is designed for high current and voltage applications, primarily in industrial and consumer electronic devices. It offers a total power dissipation of 4W and can support drain-source voltages of up to 60V.

As with many modern transistors, the TMS4NB60CH X0G utilizes an oxide-semiconductor to create a field-effect channel. This channel is what allows current to flow through the transistor when triggered. The oxide-semiconductor layer is sandwiched between the source and drain contacts and can be disrupted by an inputsuch as a voltageat either end. When this potential difference is applied, it changes the electrical fields within the semiconductor and allows the current to flow across.

When the TMS4NB60CH X0G is between its cut-off and saturation voltages (Vgs=VDS=0.8V to 30V, respectively), the device is in its triode region. In this area, the current flow is linearly proportional to the voltage applied to the gate. Outside of this region, the device is considered to be either in its peak or \'ohmic\' region, or in its saturation region.

Applications that make use of the TMS4NB60CH X0G can range from power management in computers or electronics, to power circuitry in automobiles or home appliances. It is well suited to most applications requiring low-voltage, low-resistance, and high-voltage switching. It can also be used in power circuits to provide a means of controlling large currents of up to several amperes. In addition, it can be used as a switching element in electronic circuits for high-efficiency power management.

The TMS4NB60CH X0G’s impressive low-resistance characteristics make it perfect for use in signal processing applications. This makes it a great choice for use in amplifiers and signal switching, as well as for providing high-speed switching for signal transmission in audio, video, and other systems. Furthermore, the stable and efficient switching performance of the TMS4NB60CH X0G, combined with its high-speed performance, makes it ideal for power management in desktop or laptop computers, or even in data processing.

In summary, the TMS4NB60CH X0G is a great choice of power MOSFET, offering low-resistance characteristics, high-speed switching and efficient power management in a wide range of applications. It is particularly well suited to signal processing applications, thanks to its ability to switch quickly and control large currents. Its high voltage handling capabilities make it well suited for a number of industrial and consumer electronic applications, and it is ideal for high-efficiency power management.

This content is provided for informational and educational purposes only and does not necessarily reflect the opinion of STMicroelectronics.

The specific data is subject to PDF, and the above content is for reference