TSM4NB60CH C5G

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The TSM4NB60CH C5G is a part of a new family of high-power, low-on-resistance thin-film semiconductor devices made by Toshiba. The C5G is a single-gate MOSFET designed to maximize the performance of power converters, motor drives and other power applications. It has an extremely low on-resistance and an improved package outline that makes it ideal for medium and high-speed switching operations.

The C5G is capable of switching up to 600V and 150A. It is built using a unique process that combines a p-type MOSFET and n-type MOSFET on the same island to achieve a very low on-resistance. This allows for better efficiency and lower power consumption, which makes it ideal for power converters and other high-power applications.

The C5G has a low gate-drain capacitance and a low gate-source capacitance, making it exceptionally well-suited for switching in high-frequency applications. The device also has an improved package layout that allows the gate, drain and source to be closely spaced, resulting in less board space used and lower heat dissipation.

The C5G is designed to work with a variety of gate drivers and logic circuits. This makes it suitable for a wide range of applications that require reliable and high-speed switching. The C5G also features a built-in ESD protection circuit, making it suitable for use in harsh environments.

The working principle of the C5G is based on field-effect transistors (FETs). As the name implies, these transistors use an electric field to control the flow of current through the device. This field is generated by applying a voltage to the gate of the FET, which causes an electric field to be created between the gate and the source and drain.This electric field affects the conductivity of the channel between the source and drain and can be used to control the current.

The C5G is designed to be driven by a high-speed logic signal and is capable of switching frequencies of up to 1MHz. It is also designed to withstand high voltage transients and needs very low gate drive voltage. The C5G is capable of operating at temperatures of up to 175°C, making it suitable for use in high-temperature applications.

The C5G is an ideal device for a variety of power applications due to its extremely low on-resistance, low gate-drain capacitance and improved package outline. It has a wide range of operating voltages and can be used in applications that require reliable, high-speed switching and ESD protection.

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