TSM4N60ECP ROG Discrete Semiconductor Products

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The TSMC 4N60ECP ROG is a state-of-the-art power MOSFET with a drain-source breakdown voltage rating of 600V and an incredibly low on-resistance rating of 4mΩ. It\'s engineered for operation by reducing the resistance between a drain and source, making it ideal for a number of applications such as high power applications, DC-DC converters, inverters, high voltage synchronous buck rectifiers, DC-AC inverters and more. Below, we will discuss its application field and working principle.

The 4N60ECP ROG\'s usage field is quite broad. As previously stated, it is a power MOSFET, which makes it suitable for use in applications for high power, high current, and high voltage. This device can be effectively used as an amplifier, voltage regulator, or in high power switching circuits. It is also excellent for use in DC-DC converters, high voltage synchronous buck rectifiers, DC-ac inverters, and other power management applications. Furthermore, this device can be utilized as an inverter in automotive and industrial applications as well as in consumer electronics.

The 4N60ECP ROG is a "floating channel" P-channel MOSFET. This means that it is an insulated gate field-effect transistor or IGFET, in which the gate of the device is insulated from the channel. This features makes it immune to electric breakdowns, which can be caused when a voltage gets high enough to create a direct a connection between the gate and channel of the device. Its insulated gate and high voltage rating, make it ideal for high power applications.

The 4N60ECP ROG utilizes the principles of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), which is a type of transistor that relies on semiconductor material to make an electrical connection between two terminals on either side of the device. To put it simply, a MOSFET is an electronic switch which is used to control the movement of electrons.

When no voltage is applied to the gate of the 4N60ECP ROG, electrons in the channel are not free to move, which keeps the device off. However, when a voltage is applied to the gate of the device, it causes the electrons to flow freely through the channel, which in turn turns the device on. This is the basic working principle of the 4N60ECP ROG.

The 4N60ECP ROG is an incredibly powerful and reliable device, making it an excellent choice for a number of power management and switching applications. Its low on-resistance rating, combined with its high voltage rating, make it ideal for applications in high-power and high-current applications. Furthermore, its insulated gate makes it immune to breakdowns, which is a major advantage when using the device in power-sensitive applications.

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