Allicdata Part #: | TSM4N80CZC0G-ND |
Manufacturer Part#: |
TSM4N80CZ C0G |
Price: | $ 1.31 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CHANNEL 800V 4A TO220 |
More Detail: | N-Channel 800V 4A (Tc) 38.7W (Tc) Through Hole TO-... |
DataSheet: | TSM4N80CZ C0G Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 1.19070 |
10 +: | $ 1.07541 |
100 +: | $ 0.86398 |
500 +: | $ 0.67197 |
1000 +: | $ 0.55678 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 38.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 955pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are a group of transistors used to control a current or voltage. They are commonly used in a variety of applications and provide an efficient, cost effective way to control signals and power. The TSM4N80CZ C0G is a single-channel MOSFET device that is widely used in various applications.
The TSM4N80CZ C0G is characterized by its low on-resistance, low threshold voltage, low gate charge, and low capacitance. It is suitable for high-speed switching applications, low voltage switching applications and low-noise applications such as power supply noise suppression and digital audio signals. The device also features a built-in overcurrent protection feature, allowing it to protect against excessive currents in the system.
The TSM4N80CZ C0G has several potential applications. It can be used as a switch in high power switching applications such as light dimming, motor control, and speed control. It can also be used as an amplifier in audio signal processing, as well as providing power supply noise suppression. In addition, it can be used in low-voltage and low-noise applications such as signal sensing and switching.
The working principle of the TSM4N80CZ C0G is relatively simple. It is a single-channel MOSFET device with a built-in overcurrent protection feature. When a gate voltage is applied to the device, electrons are pushed into the channel. The channel then supplies a current to the load. The device can be used to either switch on or off and can be used to control various parameters such as the speed of a motor or the intensity of a light.
The TMS4N80CZ C0G has several advantages. It is relatively easy to use and is relatively inexpensive. It is also small and efficient, making it well suited for a variety of applications. Furthermore, it has an overcurrent protection feature, making it suitable for high power applications. Finally, it is highly reliable and has a long operating life.
In conclusion, the TSM4N80CZ C0G is a single-channel MOSFET device that is widely used in various applications. It has a low on-resistance, low threshold voltage, low gate charge, and low capacitance, making it well suited for high-speed switching applications, low voltage switching applications, and low-noise applications such as power supply noise suppression and digital audio signals. The device also features a built-in overcurrent protection feature, allowing it to protect against excessive currents in the system. With its range of potential applications and advantages, the TSM4N80CZ C0G is a highly reliable, cost effective choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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