| Allicdata Part #: | TSM4N80CIC0G-ND |
| Manufacturer Part#: |
TSM4N80CI C0G |
| Price: | $ 1.56 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | MOSFET N-CHANNEL 800V 4A ITO220 |
| More Detail: | N-Channel 800V 4A (Tc) 38.7W (Tc) Through Hole ITO... |
| DataSheet: |  TSM4N80CI C0G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.41750 |
| 10 +: | $ 1.27827 |
| 100 +: | $ 1.02696 |
| 500 +: | $ 0.79876 |
| 1000 +: | $ 0.66183 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package: | ITO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 38.7W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 955pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The TSM4N80CI C0G is a commonly used enhancement-mode N-Channel MOSFET, suitable for use in a variety of applications. Its rated drain-source voltage (VDS) is 400V, and its drain current rating is 3A. It has a fast switching speed and a low-resistance channel, making it an ideal choice for high-speed switching and low power consumption applications.
The working principle of an N-Channel MOSFET is fairly simple. A voltage is applied to the gate. When the voltage is high enough, the MOSFET is in the on state, allowing current to flow through the channel between the source and the drain. When the voltage is low, the device is in the off state, preventing current from flowing through the device.
The TSM4N80CI C0G has a variety of applications. It can be used in DC-DC converters and low-side switches, where its low-resistance channel helps to reduce power consumption. It can also be used in motor control applications, where its controllable speed and high-speed switching capabilities are beneficial. Additionally, it can be used in audio amplifiers, where its robust design and low signal distortion capability makes it a suitable choice.
Overall, the TSM4N80CI C0G is a versatile, high-performance MOSFET with a wide range of applications. Its low-resistance channel, fast switching speed, and high-power capability make it a great choice for high-speed switching, low power consumption applications, motor control, and audio amplifiers.
The specific data is subject to PDF, and the above content is for reference
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