
Allicdata Part #: | TSM4NB60CPROGTR-ND |
Manufacturer Part#: |
TSM4NB60CP ROG |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CHANNEL 600V 4A TO252 |
More Detail: | N-Channel 600V 4A (Tc) 50W (Tc) Surface Mount TO-2... |
DataSheet: | ![]() |
Quantity: | 2500 |
2500 +: | $ 0.19960 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 14.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TSM4NB60CP ROG device is an insulated gate bipolar transistor (IGBT) which belongs to the family of Single Metal Oxide Semiconductor Field Effect Transistors (MOSFET). It is an advanced technology device with improved performance. It is designed to deliver the maximum efficiency and power while providing optimal current handling and noise immunity.
The TSM4NB60CP ROG is a 4A, 60V transistor, with a reverse recovery time of 25 nano-seconds and high current capability. The device also has a low on resistance of 2.2 milli-ohm and offers excellent thermal resistance performance. The device is suitable for switching and control applications in digital and analog circuits.
The TSM4NB60CP ROG is primarily used in the power conversion and switching applications. It has gained popularity in a wide array of applications such as buck converters, DC-to-DC converters, inverters, motor drives, lighting systems and HVAC systems. The device can also be used for General-Purpose switching in digital and analog circuit applications. Additionally, it can also be used to enable soft commutation in three-phase motor applications.
The TSM4NB60CP ROG is a high side device with both N-Channel MOSFET and N-Channel IGBT logic level gates. The logic level gate design allows the easy drive of the device with very low gate drive power, enabling the device to handle more current and voltages compared to regular MOSFETs.
The TSM4NB60CP ROG is based on a vertical structure with a dielectric isolation layer between the N-Channel MOSFET and the N-Channel IGBT gate. This isolation layer ensures a high linearity and channel efficiency, resulting in minimum losses and a high speed switching capability. The device’s high frequency switching capability is further enhanced by its low capacitance and dielectric losses.
One of the major advantages of the TSM4NB60CP ROG is its low operating temperature range. The device comes with a Maximum Junction temperature of 175°C, which is much lower than that of the conventional BJT and MOSFET transistors. The device also offers high peak surge current ratings, which makes it ideal for switching applications where high current spikes tend to occur.
The TSM4NB60CP ROG is a reliable and cost-effective alternative to MOSFETs and IGBTs. Its low drive requirement and high current efficiency, coupled with its excellent thermal resistance performance and ability to handle surge currents, make it a great choice for switching applications. The device is also tolerant to voltage spikes, which makes it suitable for applications where such spikes tend to occur.
The specific data is subject to PDF, and the above content is for reference
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