| Allicdata Part #: | TSM4N70CIC0G-ND |
| Manufacturer Part#: |
TSM4N70CI C0G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | MOSFET N-CH 700V 3.5A ITO220 |
| More Detail: | N-Channel 700V 3.5A (Tc) 56W (Tc) Through Hole ITO... |
| DataSheet: | TSM4N70CI C0G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package: | ITO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 56W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 595pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3.3 Ohm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.5A (Tc) |
| Drain to Source Voltage (Vdss): | 700V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The TSM4N70CI C0G is a type of insulated gate bipolar transistor (IGBT). It is used in a wide range of applications, including power converters, motor drives, motor controllers and power supplies. The TSM4N70CI C0G is a single IGBT with a switch position between the collector and emitter. It is a great choice for applications where high efficiency and low torque ripple are required.
The TSM4N70CI C0G offers excellent performance for a wide variety of applications including high power PFC converters, AC motor drives, three-phase motor control, DC motor drives, and UPS Systems. Its high operating temperature, low gate charge, and low forward voltage drop make it particularly suitable for high light-load operation.
The TSM4N70CI C0G is an N-type MOSFET, meaning that its channel is made up of N-type semiconductor material. The MOSFET structure allows the current to flow unimpeded through the device easily limiting the current flowing through the device. This makes it well suited for applications such as pulse Width Modulation (PWM) current control, microprocessor and motor control.
The TSM4N70CI C0G is a near-threshold voltage MOSFET which offers small DC on-state resistance, making it ideal for applications that require higher switching speeds whilst still achieving low loss. It also offers low capacitance levels and fast turn-off times.
The TSM4N70CI C0G features a split gate design that allows for dual driving capabilities, allowing both low-side and high-side switching to be achieved with a single device. This feature makes the TSM4N70CI C0G an ideal choice for motor control applications where a single device can be used to drive both the motor armature and field. This reduces complexity and increases power efficiency.
The TSM4N70CI C0G is a normally closed MOSFET and can be used in both low and high-side switch configurations. The device can be operated in either a frequency or voltage mode. In voltage mode, the gate voltage determines the on-state resistance and the conduction time, while in frequency mode the frequency of the gate oscillator determines the on-state resistance and conduction time.
Overall, the TSM4N70CI C0G is a reliable and efficient device that can be used in a number of applications. It is well suited for high power PFC converters, AC motor drives, microprocessor and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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TSM4N70CI C0G Datasheet/PDF