TSM4459CS RLG Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOP
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6205pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	78.4nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	5.2 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	17A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>The TSM4459CS RLG is a SPST low side N-Channel Field Effect Transistor (FET). Specifically, it is a high linear RG Low On-Resistance N-Channel FET that features a low on-state drain-to-source resistance and fast switching speed. It is used in a variety of applications such as in power management systems and as an input switch in battery-powered systems.</p><p>The TSM4459CS RLG is designed to be used in a wide range of applications such as in the automotive, industrial and consumer markets. It is designed for low switching power consumption and fast switching capability. In addition, the RLG is designed for use in PWM and linear regulated circuitry with a low surface-mount package.</p><p>The TSM4459CS RLG has many different applications such as power management systems, automotive electronics, load switches, and load regulation. It can be used as an input switch in battery-powered systems, or as a load switch that is used to regulate current and protect against overcurrent. In addition, it can be used to control voltage, current, and thermal regulation.</p><p>The basic working principle of the TSM4459CS RLG is based on the “field effect”. In layman’s terms, this is the squeezing effect that occurs when a potential is applied to the gate of a FET. When a positive potential is applied, the gate of the FET creates an electric field that squeezes the current carrying channels at the surface. This squeeze action reduces the resistance between the two terminals of the FET, making the FET conductive.</p><p>In summary, the TSM4459CS RLG is a high linear RG Low On-Resistance N-Channel Field Effect Transistor used in a variety of applications. It is designed for low switching power consumption and fast switching capability. It has many different applications such as in power management systems, automotive electronics, load switches, and load regulation. The basic working principle of the TSM4459CS RLG is based on the “field effect”.</p>

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