
TSM4435BCS RLG Discrete Semiconductor Products |
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Allicdata Part #: | TSM4435BCSRLGTR-ND |
Manufacturer Part#: |
TSM4435BCS RLG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET P-CHANNEL 30V 9.1A 8SOP |
More Detail: | P-Channel 30V 9.1A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 3.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 9.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.1A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The TSM4435BCS RLG Transistor is a class of Field Effect Transistor (FET) that utilizes Metal Oxide Semiconductor (MOS) technology to generate an electrical current through a metal strip that is covered by a silicon dioxide (SiO2) insulator. The metal strip serves as the gate electrode and causes current to flow through the transistor when a voltage is applied. This type of transistor is typically used in a number of different applications, such as digital logic circuits and analog circuits.
The TSM4435BCS RLG transistor is a single-channel MOSFET with an internal diode between the gate and the source. The internal diode aids in providing negative voltagethat help reduce the total input capacitance. It is designed for general-purpose switching applications and is capable of switching large currents with high efficiency. The other features of this MOSFET are a low input capacitance, low on voltage, and an extremely low on-resistance.
The working principle of the TSM4435BCS RLG Transistor is based on the principle of electrical field conduction between the gate and the source electrodes. This is accomplished by the application of a voltage or current to the gate and this causes electrons to migrate from the gate electrode to the source electrode. This forms a “conducting channel” between the source and the gate, that carries the current. The current is then passed on to a load connected to the output side of the transistor.
The TSM4435BCS RLG Transistor is widely used in a range of applications such as high-frequency power amplifiers, high-speed data switching circuits, as well as for general-purpose amplifiers and motor control circuits. It is also often used in low-noise environments, such as for audio applications, as it offers superior reception quality. It is often found in applications in which high switching speeds and frequencies need to be achieved, such as in the communications industry.
In terms of power applications, the TSM4435BCS RLG is often used in power supply circuits, DC to DC converters, and power inverters. It is also widely used in audio applications, as it is able to amplify signals with relatively low noise. The device is also often used as an electrostatic motor controller, as it enables the controlled movement of motor shafts through electrostatic discharge.
Overall, the TSM4435BCS RLG is an extremely versatile Field Effect Transistor that can be used in a variety of applications, from low-noise to high-power settings. Its ability to change polarity and its low input capacitance makes it particularly well-suited for applications in which high frequencies and fast switching speeds need to be achieved. Additionally, thanks to its maximum power handling capabilities, it is often used in general-purpose and motor control applications.
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