TSM4424CS RVG Discrete Semiconductor Products |
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| Allicdata Part #: | TSM4424CSRVGTR-ND |
| Manufacturer Part#: |
TSM4424CS RVG |
| Price: | $ 0.12 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | MOSFET N-CHANNEL 20V 8A 8SOP |
| More Detail: | N-Channel 20V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO... |
| DataSheet: | TSM4424CS RVG Datasheet/PDF |
| Quantity: | 500 |
| 1 +: | $ 0.12000 |
| 10 +: | $ 0.11640 |
| 100 +: | $ 0.11400 |
| 1000 +: | $ 0.11160 |
| 10000 +: | $ 0.10800 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 11.2nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 4.5A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The TSM4424CS RVG is a single N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This device is used in a variety of applications, including dc-to-dc conversion, power management, and power switching. The device has a small footprint, low on-resistance, and improved thermal performance compared to other devices.
The TSM4424CS RVG has a wide range of applications in various industries. In the automotive industry, it is used for power switching for headlight control, door locks and window control, engine control, and airbag deployment. It can also be used in the aerospace and defense industries for applications such as power supply design and motor control. In the industrial sector, it is used for motor control, drives, and power switching.
The TSM4424CS RVG is designed to operate in a wide range of applications, including high current switching, load control, and energy efficiency and monitoring. It is also capable of high frequency switching applications. The device is designed with a wide variety of features that make it a good choice for all these applications. These include a low on-resistance of 0.470 Ohms, a high tolerable gate source voltage of 12V, low gate source threshold voltage of 1V, a fast rise time of 400ns and a fast turn-off time of 900ns.
The TSM4424CS RVG is designed to work on a voltage range from 3.6 V to 18 V with a maximum gate current of 4A. The device features a steady-state avalanche energy of 265 mJ, making it suitable for a wide variety of applications. It also features a low gate capacitance of 0.525 pF, allowing for fast switching speeds and greater power efficiency.
The working principle of the TSM4424CS RVG is based on the field effect principle. The gate voltage of this device is used to control the current flow through its drain and source terminals. The gate voltage acts as a form of on/off switch, allowing current to flow through the device when the gate voltage is high and preventing the flow of current when the gate voltage is low. The device is designed to work in a wide range of operating conditions and temperatures, with an operating temperature range of -55°C to 150°C.
In summary, the TSM4424CS RVG is a single N-Channel MOSFET designed to meet the requirements of many applications. It has a low on-resistance, fast switching speed, and high avalanche energy, making it a suitable for high current switching applications. The device is designed to work in a wide range of operating conditions and temperatures, and it is suitable for a wide range of industries.
The specific data is subject to PDF, and the above content is for reference
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TSM4424CS RVG Datasheet/PDF