TSM4NC60CI C0G Allicdata Electronics
Allicdata Part #:

TSM4NC60CIC0G-ND

Manufacturer Part#:

TSM4NC60CI C0G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CHANNEL 600V 4A ITO220
More Detail: N-Channel 600V 4A (Tc) 40W (Tc) Through Hole ITO-2...
DataSheet: TSM4NC60CI C0G datasheetTSM4NC60CI C0G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The TSM4NC60CI C0G is a power MOSFET device that is typically used to switch higher current and voltage. It is a single-die, n-channel enhancement-mode transistor that operates as a low-side switch in a MOSFET H-bridge. The TSM4NC60CI C0G has a wide variety of applications due to its low on-resistance and high breakdown voltage. It is most commonly used in motor control applications, lighting, power supply, and automotive industries due to its low resistance and high efficiency.

The TSM4NC60CI C0G is a 600V rated, 0.4Ω rated RDS (on), and 14A pulsed current rated device. It has low gate charge and low Coss, making it ideal for high-performance switching applications. The device also has short circuit protection, thermal shutdown, and over-voltage protection features. These features provide improved system reliability and protection from over-current and short circuit faults.

The working principle of the TSM4NC60CI C0G can be divided into two parts: how it functions as a switch and how it controls a load or device. As a switch, the TSM4NC60CI C0G is used to turn on and off a circuit by rapidly switching the flow of current. This is achieved by applying a voltage across the gate and drain terminals which sets the voltage threshold of the device. When the voltage across the gate and drain terminals exceeds the threshold, current can flow from the source to the drain, allowing the MOSFET to “on”. To turn the device “off”, the voltage across the gate and drain must be below the threshold.

When controlling a load or device, the TSM4NC60CI C0G can be used to regulate the amount of current that passes through the load. This is done by adjusting the gate voltage to create an adjustable voltage drop across the drain and source terminals. The higher the gate voltage, the more current that will be allowed to flow through the load. The TSM4NC60CI C0G is also able to PWM (pulse width modulating) the voltage to create an adjustable duty cycle, allowing for fine tuning of the current. The TSM4NC60CI C0G also includes an Advanced Design System (ADS) feature which simplifies the design process when creating a MOSFET H-bridge circuit.

The TSM4NC60CI C0G is a single-die, n-channel enhancement-mode MOSFET transistor. It is able to switch on and off a circuit rapidly by adjusting the gate voltage, and it can also regulate the amount of current that passes through a load. The device is high performance and features short circuit protection, thermal shutdown, and over-voltage protection. The TSM4NC60CI C0G is most commonly used in motor control applications, lighting, power supply, and automotive industries.

The specific data is subject to PDF, and the above content is for reference

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