Allicdata Part #: | TSM480P06CPROGTR-ND |
Manufacturer Part#: |
TSM480P06CP ROG |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET P-CHANNEL 60V 20A TO252 |
More Detail: | P-Channel 60V 20A (Tc) 66W (Tc) Surface Mount TO-2... |
DataSheet: | TSM480P06CP ROG Datasheet/PDF |
Quantity: | 10000 |
2500 +: | $ 0.15722 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Power Dissipation (Max): | 66W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1250pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 48 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TSM480P06CP ROG is a high-current, high-voltage, high-speed, surface-mount MOSFET device (metal-oxide-semiconductor field-effect transistor) typically used in applications that require high current, high speed, and high voltage switching capabilities. It is part of a larger family of discrete MOSFETs and is part of a much larger family of Transistors - FETs, MOSFETs - Single. This device is commonly used in consumer electronics, telecommunication, automotive, and power supply applications.
Device Construct
The TSM480P06CP ROG consists of two devices in a single package. It is a three-terminal device with a source, gate, and drain. The source pin is the input for the transistor, the gate pin is the control for the transistor and the drain pin is the output for the transistor. The gate terminal is insulated from the source and drain by a thin layer of silicon dioxide, which is an insulator. There is also an interconnect between the gate and drain which is called an "embedded diode".
Performance Specifications
The performance specifications for the TSM480P06CP ROG are as follows. It has a maximum operating voltage of 30 volts and a drain-source on-state resistance of 0.028 ohms. The device can handle up to 480 amps of current and its poor frequency response is up to 100kHz. The device\'s breakdown voltage is 30 volts and the drain-gate capacitance is 9 pF.
Applications and Working Principle
The TSM480P06CP ROG is commonly used in applications that require high current, high speed and high voltage switching capabilities. It is used for load switching, motor control, lighting control, H-bridge circuits, current limiters and other high current/high voltage applications. It is also suitable for use in power supplies and DC-DC converter circuits. The device has an efficient and reliable switching operation due to its fast switching time and strong body diode.
The TSM480P06CP ROG works on a simple principle, known as the "Field Effect". When the gate voltage is zero, the MOSFET is "OFF" (i.e. no current can flow through it). When the gate voltage is increased, the "Field Effect" is activated and this causes the MOSFET to turn "ON" (i.e. current can now flow through it). To turn "OFF" the MOSFET, the gate voltage must be reduced to zero.
Summary
The TSM480P06CP ROG is a surface-mount MOSFET device used in high current, high speed and high voltage switching applications. It is part of the Transistors - FETs, MOSFETs - Single family of devices and is suitable for use in power supplies and DC-DC converter circuits. The device has an efficient and reliable switching operation due to its fast switching time and strong body diode. The device works on a simple principle, known as the "Field Effect".
The specific data is subject to PDF, and the above content is for reference
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