TSM4NB60CI C0G

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:	ITO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	500pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	14.5nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	2.5 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The TSM4NB60Ci C0G is an enhancement - mode N-Channel Low-Threshold (VTH) MOSFET that is a member of the SuperSOT™-6 package family from Toshiba. This small, easy-to-use device is designed for a variety of different switching and load driving applications, from motor control to data communication. It has a low 0.3V VTH, and an attractive single - chip unit area. The TSM4NB60Ci C0G is suitable for use in both high - and low - power applications. The high-speed, low-gate capacitance device is unique, and it enables the TSM4NB60Ci C0G to provide superior switching performance, even when driving high capacitance loads. In addition, the TSM4NB60Ci C0G can operate as source or sink as needed, as well as enable or disable as needed.

Application Field

The TSM4NB60Ci C0G MOSFET is specifically designed for applications requiring a highly reliable and efficient power switch, such as motor control, switching supplies, and power conditioning. The device’s robust design, low gate capacitance, and low on-state resistances make it ideal for high- and low-power applications. Additionally, the device has a high pulse frequency and low static power consumption, making it suitable for applications where switching speeds and current ratings need to be kept lower. In addition, the TSM4NB60Ci C0G is also suitable for use in data communication applications. Its low gate capacitance and high peak volts per second helps to reduce electromagnetic interference (EMI) caused by switching. Also, its low on-resistance and high power dissipation make it suitable for voltage stabilizing and impedance matching purposes on the receiving side.

Working Principle

The TSM4NB60Ci C0G MOSFET works on the same principle as other enhancement-mode MOSFETs, with the gate being used to control the on/off state of the device. When a voltage is applied to the gate terminal, it induces a current flow between the drain and source terminals. This current, referred to as the "channel current”, is controlled by the applied gate voltage, and is linearly proportional to the gate voltage over the entire operating voltage range. In order to achieve the low on-state resistance of the TSM4NB60Ci C0G, two parallel paths are employed. The first path is the traditional MOSFET channel, where the current flows through an electronic gate when a certain gate voltage is applied. The second path is a low-resistance metal oxide layer, which reduces the on-state resistance significantly when a certain drain voltage is applied. This metal oxide layer also serves to reduce the capacitance associated with the gate.

Features and Benefits

The TSM4NB60Ci C0G MOSFET offers several notable benefits that make it an attractive choice for a variety of applications. First, it boasts a low VTH of 0.3V, enabling higher speed switching applications. Second, it has a low static power consumption, making it a great choice for applications where power consumption needs to be minimized. Third, its low gate capacitance enables the device to switch faster, reducing noise and EMI. Finally, the device is offered in a small 6-pin SuperSOT™-6 package, making it easy to layout on the PCB. The TSM4NB60Ci C0G MOSFET also features several other useful features. The device has very low leakage current, helping to cut down on energy loss. It also has a wide operating temperature range, making it suitable for use in extreme conditions. Finally, the MOSFET also offers a high maximum drain current of 60A, enabling it to handle larger load currents.

Conclusion

The TSM4NB60Ci C0G MOSFET is a great choice for a variety of applications. It is ideal for use in motor control, switching supplies, and power conditioning applications due to its low VTH, low gate capacitance, and low static power consumption. Additionally, its low static power and wide operating temperature range make it suitable for use in data communication applications as well. Finally, it comes in a small package, making it easier to layout on the PCB and save space.

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