
Allicdata Part #: | TSM4NB60CZC0G-ND |
Manufacturer Part#: |
TSM4NB60CZ C0G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CHANNEL 600V 4A TO220 |
More Detail: | N-Channel 600V 4A (Tc) 50W (Tc) Through Hole TO-22... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 14.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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A TSM4NB60CZ C0G is a type of single N-Channel enhancement mode MOSFET that was commonly used for switched-mode power supply applications. It features a p-dope high side and an n-dope low side. The device has a voltage rating of 600V and is designed to handle load currents up to 16A. The device has a low on-state resistance of 5.8 Ω and a low Qrr of 10ns. Its maximum drain current is 25A and its drain-source Breakdown Voltage is 4V.
The applications of TSM4NB60CZ C0G includes switching in radio-frequency and power supply circuits, DC-DC converters, battery management systems, AC/DC converters and other power switch-mode circuits. It is also popular in the electric powertrains and automobiles. The TSM4NB60CZ C0G is also suitable for other types of power circuits, such as power amplifiers, power controllers, and power-line adaptors.
The working principle of the TSM4NB60CZ C0G is based on the MOSFET technology. It features an N-Channel enhancement mode that allows for low on-state resistance and higher efficiency. The TSM4NB60CZ C0G also features a fast switching speed, low gate charge and a low input capacitance.
The TSM4NB60CZ C0G is able to operate over a wide temperature range (-55°C to +125°C) while providing enhanced reliability. It also comes with a low-leakage current rating and a high-dissipation capability. This makes it suitable for a wide range of applications where high power dissipation and reliability is required.
The TSM4NB60CZ C0G is designed for use with complementary MOSFETs for low-inductance applications. When used with an appropriate gate driver, it provides an improved efficiency and a fast switching time. Its low input capacitance also enables it to be used in high frequency applications.
In conclusion, the TSM4NB60CZ C0G is an ideal choice for a wide range of applications that require high power dissipation, fast switching speed and low input capacitance. It is also suitable for use in radio frequency and power supply circuits, DC-DC converters and other power switch-mode circuits. Its low leakage current rating and wide temperature range make it an ideal choice for reliable operation over a wide range of conditions.
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