TSM4N70CP ROG Discrete Semiconductor Products |
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| Allicdata Part #: | TSM4N70CPROGTR-ND |
| Manufacturer Part#: |
TSM4N70CP ROG |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | MOSFET N-CH 700V 3.5A TO252 |
| More Detail: | N-Channel 700V 3.5A (Tc) 56W (Tc) Surface Mount TO... |
| DataSheet: | TSM4N70CP ROG Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252, (D-Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 56W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 595pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3.3 Ohm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.5A (Tc) |
| Drain to Source Voltage (Vdss): | 700V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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<p>The TSM4N70CP ROG is a vertical double-diffused metal oxide semiconductor field-effect transistor (MOSFET) designed for various power applications. It is an electronic component that utilizes the flow of electrons to control electricity. To be specific, the TSM4N70CP ROG is a single monolithic MOSFET with integrated drain-source-gate three port protection. The device has a breakdown voltage of 140V, which is quite high by comparison. Its maximum power dissipation is approximately 8W and its drain-source current rating is 6A. In this article, we will be discussing the application field and working principle of the TSM4N70CP ROG.</p><p>The most common application of the TSM4N70CP ROG is in the field of power switching. It is ideal for use in high power applications where high voltage, high current, and high speed are all important. For example, it can be used in high-performance power supplies as well as in motor control systems. It can also be used in inverters, DC to DC converters, rectifiers, and other motor controls.</p><p>In addition, the TSM4N70CP ROG has the added advantage of being able to be driven from both AC and DC sources. This means that it can be used to drive both AC and DC motor loads. This is beneficial for those who need to drive both AC and DC motor loads in the same circuit. This allows for the correct implementation and control of the motor loads.</p><p>The working principle of the TSM4N70CP ROG is that when a voltage is applied to the gate, it allows current to flow through the MOSFET. This current creates a voltage drop and this voltage drop across the MOSFET determines the drain-source voltage. This voltage determines the amount of current that flows through the MOSFET. If the MOSFET is overdriven, it will create an excessive voltage drop and can result in more current than desired. Therefore, it is important to ensure that the MOSFET is always operated within its specified parameters.</p><p>In conclusion, the TSM4N70CP ROG is a powerful and versatile device. Its application field is mainly in the field of power switching and it can be driven from both AC and DC sources. It has a breakdown voltage of 140V and a maximum power dissipation of 8W. Its drain-source current rating is 6A. Its working principle is that when a voltage is applied to the gate, it allows current to flow through the MOSFET. The voltage drop across the MOSFET determines the drain-source voltage, which determines the amount of current that flows through the MOSFET. For these reasons, the TSM4N70CP ROG is an excellent option for those looking for a reliable and durable power switching device.</p>The specific data is subject to PDF, and the above content is for reference
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TSM4N70CP ROG Datasheet/PDF