UNR221800L Allicdata Electronics

UNR221800L Discrete Semiconductor Products

Allicdata Part #:

UNR221800LTR-ND

Manufacturer Part#:

UNR221800L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 200MW MINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR221800L datasheetUNR221800L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 510 Ohms
Resistor - Emitter Base (R2): 5.1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Description

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The UNR221800L is a pre-biased, single bipolar junction transistor (BJT). It is designed primarily for use in current and voltage amplifying circuits. This type of device is used in a wide range of applications including audio amplifiers, oscillators, and control systems.

The UNR221800L consists of two junctions, a collector and an emitter, as well as a base. It is manufactured using a process that allows for higher gain and lower noise characteristics than transistors manufactured using other processes. Due to its design, the device has a low offset voltage and can handle high currents without compromise. This makes it ideal for use in DC power amplifiers, AC coupling systems and multiple output drive applications.

operates by passing a current from the collector to the emitter. The base controls the amount of current passing through the collector-emitter junction by affecting the junction\'s resistance. In order for the transistor to be ‘on’ and conduct, a voltage must exist between the collector and the base, called a biasing voltage. This biasing voltage is responsible for ensuring that no current passes through the device until a small amount of current is passed through the base, thereby creating a current path between the collector and the emitter.

The UNR221800L is designed to operate in specified voltage and current ranges. It requires a biasing voltage ranging between 15V and 25V and a maximum DC collector current ranging between 1A and 2.5A. The device can operate in temperature ranges of -40°C to 150°C and has a maximum collector-emitter breakdown voltage of 200V. This makes it suitable for use in many industrial, commercial and consumer applications.

The UNR221800L is a versatile and efficient device that can be easily integrated into many types of systems. Its pre-biased design allows for a simple and cost-effective way for engineers to incorporate the device into their designs. Its high current and voltage rating, low noise characteristics and wide temperature range makes it ideal for a wide range of applications including audio amplifiers, oscillators and control systems.

The specific data is subject to PDF, and the above content is for reference

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