UNR211F00L Allicdata Electronics

UNR211F00L Discrete Semiconductor Products

Allicdata Part #:

UNR211F00LTR-ND

Manufacturer Part#:

UNR211F00L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 200MW MINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR211F00L datasheetUNR211F00L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Description

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UNR211F00L is a single, pre-biased bipolar junction transistor (BJT), which is a three-terminal device used for switching and amplifying electrical signals. It is an NPN transistor, meaning that its primary function is to control current between its base and collector terminals. UNR211F00L transistors have a variety of applications and have been used in a wide range of products, from computer processors to digital appliances.

The UNR211F00L is a power transistor, meaning that it can be used to control large currents and voltages. The device is designed to be used in a wide variety of power supply applications, including DC-DC and AC-DC converters, switching power supplies, and audio amplifiers. The UNR211F00L has an HFE rating of up to 200, which makes it suitable for applications requiring high output power. The device also has a high power dissipation rating, allowing it to withstand large currents with minimal power consumption.

UNR211F00L transistors are typically used in pre-biased configurations, meaning that the base-to-emitter voltage is kept above the forward breakpoint of the device, allowing for faster switching speeds. This is typically done by designing a power supply such that the PNP transistor is always biased on, allowing the UNR211F00L to be turn on more quickly. Pre-biased transistors have a number of advantages over regular transistors, including improved response time, better current regulation, and improved power efficiency.

The working principle of the UNR211F00L is based on the same principles as other BJTs. It operates by allowing current to flow through its emitter-base junction when voltage is applied to the base of the transistor. This causes current to be amplified, allowing the device to be used for switching and amplification. The amplification factor (HFE) of the UNR211F00L is a function of the voltage applied, as well as the temperature of the device.

The UNR211F00L is a versatile device that is used in a variety of applications, from power supplies to audio amplifiers. Its pre-biased configuration allows for faster response times and improved efficiency, making it the ideal device for many power supply applications. The working principle of the transistor is based on the same principles as other BJTs, making it an ideal choice for switching and amplification applications.

The specific data is subject to PDF, and the above content is for reference

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