UNR221400L Discrete Semiconductor Products |
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Allicdata Part #: | UNR221400LTR-ND |
Manufacturer Part#: |
UNR221400L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR221400L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Mini3-G1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors are widely used in many electrical and electronic applications due to their superior abilities to control current, voltage, and power. The UNR221400L transistor is an NPN type amplifier that is typically used for general amplification of signals in communication and audio circuits. This single pre-biased transistor is one of the most widely used transistors due to its affordability and easy to work with features.
The base region of the UNR221400L is populated with materials that act as a resistor, providing a source of bias voltage and current. Being pre-biased, the transistor does not require an external voltage source as the bias voltage and current are pre-set. Consequently, the UNR221400L is much easier to set up and handle than other transistors. This is one of the most important advantages of using this type of transistor, as it allows faster and simpler design of circuits.
The working principle of the UNR221400L is simple. The transistor is made up of three main regions, such as the emitter, collector, and base. When forward biased, the base-emitter junction conducts allowing a large current to flow between the emitter and collector. This operation of the transistor allows the voltage across the two terminals, i.e. the collector and emitter, to drop, and is referred as collector current flow.
The current gain of the UNR221400L is high, and the current saturation power is low. The maximum current that can be handled is 1.0 ampere and the maximum voltage rating is 50V. As for the overall power dissipation, it is limited to 500mW. This makes the UNR221400L an excellent choice for applications with low power requirements.
The UNR221400L is mainly used for general amplification of analog signals especially in communication and audio circuits. It can also be used for switching applications due to its high current gain. Additionally, this transistor is often used in small and portable electronics because of its small size, low power consumption and pre-biased feature.
In conclusion, the UNR221400L is one of the most widely used transistors due to its affordability, low power consumption, easy to set up features and compact size. With its high current gain and pre-biased feature, it can be used for a variety of applications including communication, audio circuits and switching applications. However, it is important to note that the maximum power and voltage capacity of the UNR221400L should be taken into consideration before using it in any circuit.
The specific data is subject to PDF, and the above content is for reference
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