UNR212400L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	1µA
Frequency - Transition:	200MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	Mini3-G1

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UNR212400L application field and working principle

UNR212400L is a pre-biased single transistor type bipolar junction transistor (BJT). It has a high input impedance and low output impedance, making it an ideal choice for signal amplification and power amplification systems.The UNR212400L can be found in a wide range of electronic applications. It is often used in amplifiers for audio and telecommunication systems, instrumentation, video signal processing equipment, manufacturing and process control systems, radio communication and radar systems, and power conditioning systems.BJTs have three terminals, commonly referred to as collector, base and emitter. In the UNR212400L, these pins are labeled C, B and E respectively. The BJT functions as a switch, allowing current to flow between the collector and emitter when a voltage is applied to the base.The BJT is pre-biased on the UNR212400L. Pre-biasing is a process that applies a small amount of voltage to the base/collector junction of a BJT before the circuit is turned on. This ensures that the device is always in the “on” state, which prevents transients and improves the overall stability of the circuit.The UNR212400L is usually operated in the “common emitter” configuration. In the common emitter configuration, the base-emitter diode is forward biased, allowing current to flow from the emitter to the base. This current is then amplified by the collector-emitter junction and passes through the load, which is connected to the collector.The common emitter configuration has several advantages. The output of the device can be adjusted by varying the ratio of current gain (beta) and input resistance (r_in). This allows the output of the device to be adjusted to suit a variety of applications. The output impedance of the device is also low, making it suitable for use in power amplification systems.In conclusion, the UNR212400L is a pre-biased single transistor type bipolar junction transistor (BJT) with a wide range of applications. It is usually operated in the “common emitter” configuration and offers adjustable gain, low output impedance and improved stability when pre-biased.

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