UNR211000L Allicdata Electronics

UNR211000L Discrete Semiconductor Products

Allicdata Part #:

UNR211000LTR-ND

Manufacturer Part#:

UNR211000L

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 200MW MINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR211000L datasheetUNR211000L Datasheet/PDF
Quantity: 3000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.04399
Stock 3000Can Ship Immediately
$ 0.05
Specifications
Resistor - Base (R1): 47 kOhms
Supplier Device Package: Mini3-G1
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 80MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Series: --
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The UNR211000L is a single, pre-biased, bipolar junction transistor (BJT), that is specifically designed for telecom-based applications. It is able to support both normal and reverse conduction under bias voltage. The UNR211000L is able to operate as both an amplifier and a switching component in communications applications.

The UNR211000L features an integrated, low-noise internal impedance, along with a small and lightweight package. It also has a small power dissipation and a low thermal impedance. This makes it an ideal solution for high-density, high-speed products, where space and power efficiency is of the utmost importance. The UNR211000L has a wide range of operating temperature, bias voltages and current ranges.

The UNR211000L core operation is based on the transfer of electrons within the semiconductor material. The electrons can be modulated to act as either an amplifier or a switch in order to enable communication or provide signal filtering or low-noise amplification activities.

The UNR211000L works by controlling the current in a circuit. When the base voltage is increased, it allows more current to pass. This increases the differential voltage between the collector and emitter, increasing the transistor’s gain. When the base voltage is decreased, it reduces the current and decreases the gain.

The UNR211000L features a high gain and low noise, making it ideal for use in telecommunication applications, such as in base stations, line cards, switches and antenna systems. It is also suitable for high signal current applications and can be used for active power filters, low-noise amplifiers and signal conditioning. The UNR211000L is capable of operating at a range of frequencies, from 150kHz to 4GHz.

The UNR211000L also offers a low distortion and a wide dynamic range, making it an excellent choice for communication systems that require low noise, high signal-to-noise ratio, or operation in harsh or noisy environments.

The UNR211000L is also able to operate under an extended temperature range, making it suitable for use in a variety of markets, such as military and aerospace applications.

In conclusion, the UNR211000L is an ideal solution for all types of communications applications, offering high performance and low noise, while being small and lightweight, with low power dissipation and thermal impedance.

The specific data is subject to PDF, and the above content is for reference

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