UNR211E00L Discrete Semiconductor Products

Resistor - Emitter Base (R2):	22 kOhms
Supplier Device Package:	Mini3-G1
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Power - Max:	200mW
Frequency - Transition:	150MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	47 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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UNR211E00L application field and working principleUnipolar transistors are a special type of highly effective and efficient components used in various sectors of the electronics industry. They are specifically designed for applications where the need for a switchable current source is in demand. Unipolar transistors are usually configured as single, pre-biased transistors in either form.Unipolar transistors have several advantages over conventional bipolar transistors. They have the advantage of providing a greater output current with a significantly lower power supply resulting in a higher level of efficiency. By using a unipolar transistor as a switch, the gate voltage of the device is the only required control parameter. Also, they are less prone to similar breakdowns compared to the bipolar devices.The UNR211E00L is an advanced device in the unipolar transistor family. It is a single, pre-biased NPN transistor, meaning it passes a current when a current is applied to its base terminal. This type of device has a very low saturation voltage, meaning it can switch quickly without having to worry about a high voltage drop. It is also known for its low power dissipation making it ideal for low-power applications. Furthermore, it is designed with a low off-state current, which is essential in low-current radio receivers.The UNR211E00L working principle is based on the physics of the transistor junction. When a small voltage is applied to the base terminal, it causes a large electric field between the collector and emitter terminals. This electric field then forces the current to pass through the transistor. Since the electric field will vary with the voltage applied to the base terminal, so will the current passing through the transistor. The UNR211E00L is a high-gain device, meaning it needs very little current to operate, making it a good choice for battery operated systems or in ultra low voltage applications.The UNR211E00L is widely used in several applications. It is used as a switch in transistors, amplifiers, binary circuits, digital systems and other power systems. It is also used for voltage references and data bus interfaces. Furthermore, it is popular in displays, PoE systems and climate control systems.The UNR211E00L is a solid-state NPN transistor offering high performance and quality characteristics. It can provide an efficient and cost-effective solution for various applications in the field of electronics. It is highly reliable and is suitable for high-speed operations in addition to its low-voltage application capability.

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