UNR212200L Allicdata Electronics

UNR212200L Discrete Semiconductor Products

Allicdata Part #:

UNR212200LTR-ND

Manufacturer Part#:

UNR212200L

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 200MW MINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR212200L datasheetUNR212200L Datasheet/PDF
Quantity: 9000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.10716
6000 +: $ 0.10025
Stock 9000Can Ship Immediately
$ 0.12
Specifications
Resistor - Emitter Base (R2): 4.7 kOhms
Supplier Device Package: Mini3-G1
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 10V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The UNR212200L is a single, pre-biased bipolar junction transistor (BJT) with many applications and a straightforward working principle. In this article, we’ll learn about the transistor’s working principle and its most common applications.

A bipolar junction transistor is a three-terminal semiconductor device consisting of two p-n junctions. The UNR212200L has an emitter, a base, and a collector. It is a specified device, with a rated maximum collector-emitter voltage of 200V, a maximum collector current of 2A, a maximum power dissipation of 800mW, and a minimum transition frequency of 50MHz.

The transistor works by allowing an electrical current to flow between its collector and emitter terminals. To make the current flow, a voltage must be applied to the base terminal. This voltage is known as the base-emitter voltage. When the base-emitter voltage exceeds a pre-determined level, a current will flow from the collector to the emitter, reducing the voltage across the collector-emitter and thus reducing the base-emitter voltage. This is known as a regenerative feedback action and is the working principle of the transistor.

The UNR212200L is a pre-biased BJT, meaning the device already has a voltage applied between the base and emitter above the base-emitter threshold. This allows the transistor to switch with a lower drive current and can increase the switching speed and system efficiency. The transistor has common applications such as:

  • High-efficiency audio amplifiers
  • High-frequency satellite signal amplifiers
  • Broadcasting receivers
  • Organic light-emitting diode (OLED) backlight drivers

The UNR212200L is a reliable and cost-effective pre-biased BJT. It is easy to use, with a straightforward working principle and many applications. With its high power-handling capabilities, it is an ideal solution for many audio and signal amplifier applications.

In conclusion, the UNR212200L transistor is a single, pre-biased, bipolar junction transistor with many applications and a straightforward working principle. It offers high power-handling capabilities with a simple and efficient design, making it a popular option for many audio and signal amplifier applications.

The specific data is subject to PDF, and the above content is for reference

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