UNR211500L Allicdata Electronics

UNR211500L Discrete Semiconductor Products

Allicdata Part #:

UNR211500LTR-ND

Manufacturer Part#:

UNR211500L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 200MW MINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR211500L datasheetUNR211500L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Description

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UNR211500L is a single, pre-biased, bipolar junction transistor (BJT). It is commonly used in electronic designs where high voltage, high current, and low power dissipation are required. The transistor has the ability to switch low level signals between high and low polarities and to drive high level signals up or down. This type of transistor is also used to regulate DC and AC circuits and to interface digital circuits.

A BJT consists of three layers of semiconductor material, with the outer layers being heavily doped and the inner layer lightly doped.The BJT is formed when two of the layers are joined together, forming the junction between them. This junction allows current to flow between the two layers, depending on the current in the third layer. This is how the BJT is able to switch and carry current, as the current in the third layer changes.The current in the third layer is known as the collector current.

The UNR211500L has a maximum collector current capability of 0.7 A and a maximum power dissipation of 2.5 W. The transistor can support a voltage of 150 V, giving it a large range of uses in electronic circuits. The transistor is also relatively inexpensive, making it a popular choice for many applications. It is available in a TO-220 mounting package, making it suitable for use in a wide variety of designs.

The UNR211500L has a collector-to-emitter break down voltage of 160 V and an emitter-to-collector break down voltage of 50 V. This is due to the high doping rate of the outer layers, which allows for higher voltages before break down. The transistor also has a low on-state resistance, making it ideal for applications such as power switching and load switching.

The UNR211500L is also designed to operate in temperatures ranging from -55°C to +125°C, making it suitable for use in a variety of outdoor and industrial applications. It is also relatively immune to noise and interference, making it a reliable choice for applications requiring stable performance.

In conclusion, the UNR211500L is a single, pre-biased, bipolar junction transistor that is capable of switching and carrying high voltages and currents. The transistor is also affordable, making it a popular choice for many electronic designs. The UNR211500L is also designed to operate in a wide range of temperatures and it is relatively immune to noise and interference, making it a reliable choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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