UNR222200L Allicdata Electronics

UNR222200L Discrete Semiconductor Products

Allicdata Part #:

UNR222200LTR-ND

Manufacturer Part#:

UNR222200L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 200MW MINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR222200L datasheetUNR222200L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Description

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The UNR222200L is a type of single, pre-biased bipolar junction transistor (BJT). It is designed to be used in stationary amplifiers and communication devices. The UNR222200L is the latest in a line of products from Infineon Technologies, which has been an important contributor to the development of BJT technology since the late 1950s.

The UNR222200L is an NPN BJT device, meaning that it is electrons that are used to create the electric current between base and collector, rather than holes. This type of transistor is widely used in a variety of applications because of its known reliability and cost effectiveness.

The UNR222200L has a higher base current gain when compared to other tinplates, and has a lower internal capacitance. This contributes to an overall improvement in the performance of the unit when used in applications such as level sensing, sound switching and amplifier stages. Additionally, the pre-biased design of the UNR222200L ensures that it can be used safely and effectively in high-current and voltage applications without the risk of affecting its electrical parameters.

The working principle of the UNR222200L is based on the principle of the electrically-controlled current gain. This is achieved by using an NPN semiconductor junction between its base and collector. When an electrical current passes through the base-collector junction, the electron current gain is increased, leading to an increased flow of electrons from the collector to emitter. The result is an amplified electrical current at the output.

The UNR222200L is especially suited for high-powered stationary applications, due to its high base current gain and its low input capacitance. It is very reliable and relatively low cost, making it an attractive choice for products that require the combination of power, speed and stability.

In conclusion, the UNR222200L is a reliable and cost-effective single, pre-biased bipolar junction transistor. Its high base current gain and low internal capacitance provide superior performance for a variety of applications. Its reliability and low cost make it an attractive choice for high power stationary applications. It is a proven and reliable choice for level sensing, sound switching and amplifier applications.

The specific data is subject to PDF, and the above content is for reference

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