UNR221E00L Allicdata Electronics

UNR221E00L Discrete Semiconductor Products

Allicdata Part #:

UNR221E00LTR-ND

Manufacturer Part#:

UNR221E00L

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 200MW MINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR221E00L datasheetUNR221E00L Datasheet/PDF
Quantity: 30000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.04399
6000 +: $ 0.03959
15000 +: $ 0.03519
30000 +: $ 0.03299
Stock 30000Can Ship Immediately
$ 0.05
Specifications
Resistor - Emitter Base (R2): 22 kOhms
Supplier Device Package: Mini3-G1
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 150MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Series: --
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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UNR221E00L is an NPN transistor designed as a single, pre-biased, surface mount device. It is commonly used in automotive, industrial, and consumer electronics. The transistor is manufactured by Sanyo, one of the leading manufacturers of electronic components and semiconductors.

The UNR221E00L has a very low on-state voltage drop of 0.45V for high efficiency operation, and a wide bandwidth of up to 20 MHz. With a maximum continuous collector current rating of 2 A, and a minimum prevalent collector-base breakdown voltage of 40 V, it is suitable for a wide range of applications.

The UNR221E00L has a bias resistor network and a guard diode inside the package, so it is pre-biased and ready to use, making it ideal for a variety of applications such as load switching or level shifting. It has a small footprint, which helps save critical space in the application. Additionally, the built-in guards protect against overloads, providing improved system reliability.

The UNR221E00L works on the principle of minority carrier injection in a semiconductor device. It is made up of three regions, the emitter, the base and the collector. The device is activated when a voltage is applied across the base-emitter junction. When enough voltage is applied across the junction, minority carriers (holes and electrons) are injected into the base region which enhances the current flow between the collector and the emitter. This is because the injected carriers form an avalanche current between the collector and the emitter.

The current gain of the device is determined by the ratio of the collector current to the base current. The maximum current gain for the UNR221E00L is 250, making it suitable for applications that require a high gain. It is also capable of operating at high junction temperatures, which makes it suitable for automotive and industrial applications.

The UNR221E00L is an easy to use and reliable transistor, containing a resistor network and a guard diode in the device, so it is pre-biased ready to use. Its high current gain and wide bandwidth make it suitable for a variety of applications, such as load switching or level shifting. Additionally, its small size makes it space efficient, and its ability to operate at high junction temperatures make it well suited for a variety of automotive, industrial, and consumer electronic applications.

The specific data is subject to PDF, and the above content is for reference

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