UNR221700L Discrete Semiconductor Products |
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Allicdata Part #: | UNR221700LTR-ND |
Manufacturer Part#: |
UNR221700L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR221700L Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04399 |
Resistor - Base (R1): | 22 kOhms |
Supplier Device Package: | Mini3-G1 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 150MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Series: | -- |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The UNR221700L is a single, pre-biased bipolar junction transistor (BJT) capable of switching off relatively high-power electronics. This transistor\'s application field ranges from transmission and line driver applications, to power switching circuits and intelligent control circuits. With a collector-emitter voltage rating of 80 volts, and a current capacity of 0.2 amps, this transistor has become a popular choice for switching duties while offering reliable performance in many circuits.
The logic used to determine the working principle of a BJT is dependent on how the transistor\'s base, emitter, and collector are biased. A BJT can be thought of as two junctions in parallel, each with two diodes composed of two pieces of semiconductor; either N-type or P-type. The collector-emitter junction is forward-biased while the base-emitter junction is reverse-biased. As current flows through the primary circuit, it is diverted from the base to the collector of the transistor, allowing a larger current to pass through the secondary circuit.
The UNR221700L is a pre-biased BJT. This means it is designed to have its base-emitter junction already pre-biased in order to reduce the amount of current needed to ensure transistor operation. The pre-biased configuration eliminates the need for an external bias resistor, which makes it more practical and cost-effective to use. It also automatically applies a reverse bias voltage to the base-emitter junction, which allows it to accurately control the circuit\'s switching frequency.
The UNR221700L is uniquely designed to meet multiple system requirements. The transistor\'s collector-emitter voltage is rated to a maximum of 80 volts, allowing for modest power switching capabilities. In addition, the current rating of 0.2 amp allows for fast control of the transistor\'s gain and switching frequency. The transistor\'s simple pre-biased construction also helps to reduce system cost by eliminating external bias components.
Due to its simple construction, increased efficiency, and cost-effectiveness, the UNR221700L style of BJT is used widely in the industrial, commercial, and automotive domains. Common applications include power switching in motor control, single-ended and push-pull power amplifiers, classes C and B amplified systems, switching drives, and HVAC systems. The transistor is also used in computer-controlled systems, such as printers and monitors.
The UNR221700L is an excellent option for a single, pre-biased BJT. Its unidirectional current control makes it an ideal choice for switching applications. The integrated pre-bias capability eliminates the need for an external bias resistor, and allows for fast control of the transistor\'s gain and switching frequency. All of these benefits come together to make the UNR221700L a popular choice for many electronic devices.
The specific data is subject to PDF, and the above content is for reference
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