UNR211D00L Allicdata Electronics

UNR211D00L Discrete Semiconductor Products

Allicdata Part #:

UNR211D00LTR-ND

Manufacturer Part#:

UNR211D00L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 200MW MINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR211D00L datasheetUNR211D00L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Description

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The UNR211D00L is a single, pre-biased and cost-effective high-speed bipolar transistor. It has a high-speed response and is ideal for use in many applications, such as output buffers, power switching applications, RF amplifiers and audio amplifiers.

The UNR211D00L is specifically designed to be used in high-speed applications. It is capable of handling high-speed switching times, and its low output capacitance allows for higher frequencies of operation. The device also features low input bias current, low output leakage currents, fast rise/fall times, and high breakdown voltage.

This device is ideal for use in applications such as audio amplifiers, RF amplifiers, power switching circuits and output buffers. In an audio amplifier, the UNR211D00L can provide a high quality, low distortion signal. In power switching applications, it can efficiently handle higher frequencies and switch times. In RF amplifiers, it can provide high power output with a low noise figure. For output buffers, the device provides fast switching speeds and low propagation delays.

The working principle of the UNR211D00L is based on bipolar transistors. A bipolar transistor is a type of transistor consisting of three layers. The base, emitter and collector of the device are formed in a single piece of semiconductor material. The base region is positively biased and electrons in the emitter are injected into the base. These electrons flow across the base and are collected by the collector. The current gained by the collector is a combination of electrons and holes, which provides current gain.

The UNR211D00L is a high speed bipolar device and is capable of operation up to 20 GHz. The device is available in a single, pre-biased package, making it more cost-effective and easy to use. It also features low power consumption and a high switching speed. The device is widely used in many applications, such as audio amplifiers, RF amplifiers, power switching circuits and output buffers.

Overall, the UNR211D00L is a cost effective and high performance single, pre-biased bipolar transistor. It is ideal for use in many applications due to its high speed response and low power consumption. With its low input bias current, fast rise/fall times, and low output leakage current, the UNR211D00L is the perfect choice for any application requiring high speed and low distortion.

The specific data is subject to PDF, and the above content is for reference

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