UNR211H00L Discrete Semiconductor Products

UNR211H00L is a single, pre-biased bipolar junction transistor (BJT) designed for high voltage and low current applications. It features an integrated base contact and can provide up to 500 volts of output. This transistor is ideal for high voltage power supplies, amplifiers, regulators, switching converters and motor controllers.

BJTs are one of the three basic types of transistors, and they are built with two layers of semi-conductive material separated by a thin layer of insulating material. The two layers of semi-conductive material are called emitter and collector, and they are separated by an n-type doping region called the base. When a voltage is applied to the base of the transistor, a small current flows from the emitter to the collector, resulting in an amplified output signal.

UNR211H00L offers a pre-biased design, which means that instead of applying a voltage to the base to turn on the transistor, it is already turned on with a small bias current. This helps reduce power consumption, improves circuit efficiency, and simplifies circuit design. It also ensures that the output voltage is constant regardless of the collector current.

The UNR211H00L transistor has a wide variety of applications. It can be used in high voltage inverters and power supplies, switching converters, motor controllers, amplifier and regulator circuits, and other power applications. It can also be used in logic circuits ad car audio amplifiers.

In conclusion, the UNR211H00L is a single, pre-biased bipolar junction transistor designed for high voltage and low current applications. It features an integrated base contact and can provide up to 500 volts of output. With its pre-biased design, it offers power savings, improved efficiency, and simplified circuit designs. It has a wide variety of applications, from high voltage inverters and power supplies to car audio amplifiers and logic circuits.