UNR222100L Allicdata Electronics

UNR222100L Discrete Semiconductor Products

Allicdata Part #:

UNR222100LTR-ND

Manufacturer Part#:

UNR222100L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 200MW MINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR222100L datasheetUNR222100L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Description

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The UNR222100L is a single pre-biased transistor device and is commonly used in applications that require high speed switching. It is a bipolar transistor, which means that it uses both n- and p-type semiconductor material to control current flow. The device is sold in a TO-220 package, which features three leads: emitter, base, and collector.

When the UNR222100L is biased in the forward direction, its emitter-base junction is forward-biased while its collector-base junction is reverse-biased. This causes a transistor effect where current current flows from the emitter to the collector, controlling current flow from the base to the collector. The base connection acts as a gate to control how much current will flow from the collector; the more current flowing through the base connection, the more current will flow from the collector. In this manner, the transistor functions as a voltage and current controlled switch.

The UNR222100L has a high-voltage and current rating that can handle up to 600 volts and up to 800 mA. It is also a low-power device, meaning that it operates using minimal power, which helps to extend its operational lifetime. This is especially important when the use-case calls for applications that require switching operations for extended periods of time.

As a high-speed transistor, the UNR222100L can switch quickly and accurately between on and off states, allowing for reliable and precise control of current flow. Its high-speed switching ability is especially useful for applications such as power supplies, car audio systems, and other similar applications. The transistor\'s wide voltage and current ratings make it ideal for use in high-stress environments.

The UNR222100L is also designed to be automated and highly reliable. Its reliable operation and consistent performance ensure that the device operates smoothly and accurately. Additionally, its low power consumption ensures that the device operates with minimal electricity, which helps to extend its operational lifetime and reduce operating costs.

Overall, the UNR222100L is an effective, reliable, and energy-efficient single pre-biased transistor device. Its high-speed switching capabilities, low power consumption, and high voltage and current rating make it well suited for a range of applications, such as power supplies, car audio systems, and other similar applications. This device is an excellent choice for those seeking a reliable, efficient, and cost-effective transistor.

The specific data is subject to PDF, and the above content is for reference

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