UNR221000L Discrete Semiconductor Products

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The UNR221000L is a single, pre-biased Bipolar Junction Transistor (BJT) designed to provide superior performance in a range of applications. It is suitable for medium power switching, audio amplifier applications, motor control and general purpose switching. The UNR221000L features a high collector current rating of 2 amperes and can operate at frequencies up to 500kHz.

The UNR221000L is a NPNBJT with a pre-biased collector and an open-base configuration, meaning that the collector is reverse-biased with the base open. This bias allows for reduced base current and improved switch speed. The transistor also has a low saturation voltage of 0.3V and a maximum collector emitter voltage of 80V. In addition, the device features an internal built-in protection diode with a maximum forward voltage drop of 0.7V, making it highly suitable for inductive and motor control loads.

The working principle of the UNR221000L is based on the basic principles of transistor action. When current flows through the collector-base junction, it causes current to flow through the base-emitter junction as well. This is known as forward-current biasing and it occurs when the collector-base voltage is sufficient to cause a current flow through the base of the transistor. The current then passes through the base-emitter junction and creates an amplified collector current. This current is then shared between the collector and the emitter.

When the transistor is switched off, the reverse bias applied to the collector-base junction prevents current flowing through the base-emitter junction. This prevents the transistor from being triggered on, thus providing a high level of isolation.

The UNR221000L also features built-in over-voltage protection, which prevents the transistor from being triggered on by high voltage transients. This ensures that the device is protected against damage caused by the application of external voltages such as those produced by ESD (electrostatic discharge) or EMC (electromagnetic compatibility) related disturbances. This protection is not provided at the collector-base junction; it is provided at the ‘base-ring’ junction, which is the junction between the base and the collector-ring lugs.

In summary, the UNR221000L is a single, pre-biased Bipolar Junction Transistor (BJT) that is suitable for applications including medium power switching, audio amplifier applications, motor control and general purpose switching. It features a high collector current rating, fast switching speed and built-in overload protection, making it an ideal choice for a wide range of applications.

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