UNR211L00L Allicdata Electronics

UNR211L00L Discrete Semiconductor Products

Allicdata Part #:

UNR211L00LTR-ND

Manufacturer Part#:

UNR211L00L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 200MW MINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR211L00L datasheetUNR211L00L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Description

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The UNR211L00L is a single, pre-biased bipolar junction transistor (BJT) intended for general purpose small signal amplifying applications. It features high speed, low noise and an industry-leading high gain for its size. This makes the UNR211L00L well-suited for a variety of analog and digital applications, such as high speed amplifiers for radio and other communications systems, low-noise amplifiers for medical imaging, low power switching and various other audio and video applications.

The UNR211L00L is available in TO-92 (formally known as Plastic-Encapsulated Transistor or PCT) packages, and it has three pins: base, emitter, and collector. A schematic diagram of the UNR211L00L is shown below.

UNR211L00L schematic

The base-emitter junction of the transistor acts as a diode and is used as the input stage. It allows current to flow in one direction only, from the emitter to the base. This current flow is called forward biasing. When the base-emitter junction is forward biased, it allows the collector current to flow in the opposite direction of the base current, from the collector to the emitter. This is called reverse biasing the collector-emitter junction.

In general, the gain of a BJT is determined by the current ratio between the collector and the base. This ratio is expressed as the transconductance, also known as hFE. The higher the hFE, the greater the gain of a BJT. The UNR211L00L has a hFE of 300, which is much higher than the other BJTs of its size, thus providing better gain and performance in applications.

The UNR211L00L is pre-biased, which means that it has already been set to its optimum performance level, and it needs no external biasing components. This makes it easy to use and cost-effective, and it allows it to be quickly and seamlessly integrated into existing circuits.

In addition, the UNR211L00L has excellent ESD (electro-static discharge) protection, which increases its reliability in the field, and its small size allows for exceptionally high gain in small, low profile applications. As such, the UNR211L00L is an excellent choice for general analog and digital applications, especially those where high speed and low noise performance are of paramount importance.

The specific data is subject to PDF, and the above content is for reference

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