ZVN4206ASTOB Allicdata Electronics
Allicdata Part #:

ZVN4206ASTOB-ND

Manufacturer Part#:

ZVN4206ASTOB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 0.6A TO92-3
More Detail: N-Channel 60V 600mA (Ta) 700mW (Ta) Through Hole E...
DataSheet: ZVN4206ASTOB datasheetZVN4206ASTOB Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
FET Feature: --
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: E-Line (TO-92 compatible)
Package / Case: E-Line-3
Description

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The ZVN4206ASTOB is a medium-voltage N-channel enhancement-mode power MOSFET with a drain-source breakdown voltage of 30V, a continuous drain current of 4A, and a maximum gate-source voltage of 30V. This MOSFET is ideal for applications such as motor control, power management, open-loop and closed-loop DC/DC converters, and DC/AC inverters. The device is designed to operate from -55 ° C to +150 ° C, making it ideal for demanding applications.

The ZVN4206ASTOB uses a combination of voltage and temperature protection features to ensure device reliability. This includes Thermal Shutdown (TSD), Drain-Source Voltage (VDS), Gate-Source Voltage (VGS), Current Limit (CL), and Thermal Impedance (ZTH). These features provide protection to the device against overvoltage, overtemperature, and overcurrent conditions that can cause permanent damage to the MOSFET.

The ZVN4206ASTOB utilizes the source-follower configuration to provide MOSFETs with low on-resistance and high transconductance. This configuration also provides a low input capacitance, allowing for fast turn-on and turn-off times. The MOSFET has a relatively flat response curve over its entire operating range, allowing for higher switching speeds and improved efficiency. The high noise immunity of the device also allows for high performance in noise-sensitive applications.

The ZVN4206ASTOB MOSFET works on the principle of capacitive coupling. When a voltage is applied to the gate of the device, the gate-source capacitance causes an electric field to be created between the gate and the source. This electric field attracts additional charge carriers towards the gate and into the channel of the device, causing it to conduct. In this way, the MOSFET controls the current flow between the drain and source.

In conclusion, the ZVN4206ASTOB is a high performance medium-voltage N-channel enhancement-mode power MOSFET. Its source-follower configuration, combined with its temperature and voltage protection features, make it an ideal choice for demanding applications such as motor control, power management, and DC/DC and DC/AC inverters. Its low input capacitance and high transconductance also allow the device to operate at high switching speeds and improved efficiency while providing high noise immunity.

The specific data is subject to PDF, and the above content is for reference

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