Allicdata Part #: | ZVN4306ASTZ-ND |
Manufacturer Part#: |
ZVN4306ASTZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 1.1A TO92-3 |
More Detail: | N-Channel 60V 1.1A (Ta) 850mW (Ta) Through Hole E-... |
DataSheet: | ZVN4306ASTZ Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 1.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 330 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 850mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3 |
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The ZVN4306ASTZ is a N-Channel enhancement-mode powerfield-effect transistor designed and developed by Diodes Incorporated. It can be used with a variety of circuit applications, including power switching, line accuracy and voltage level regulators.
A FET (Field-Effect Transistor) is a type of transistor that has an electrical field effect on its conduction. The ZVN4306ASTZ is a single, N-Channel FET, meaning that it has a single gate and only one N-Channel, which can be used to control the current flow across the device.
The ZVN4306ASTZ has a maximum drain-source voltage of 60V and a maximum drain current of 20A. It also has a maximum power dissipation rating of 1.5W and a threshold voltage (Vth) of 3.2V at 25°C. Its break-down voltage, which is the maximum voltage that can be applied between the drain and the source of the FET, is 74V.
The ZVN4306ASTZ has a maximum gate-source voltage of ±12V. The threshold voltage is the voltage level at which the FET begins to conduct and is always greater than the minimum gate voltage at which the FET begins to conduct. The drain-source on-resistance of the device is typically 7.4mΩ at a drain current of 10A.
The ZVN4306ASTZ has several features that make it ideal for power switching applications. Its wide voltage range (VDS of 60V) and low gate-source voltage (VGS of ±12V) make it suitable for use in a wide range of applications, including power converters and power switching regulators. The ZVN4306ASTZ is also designed to work with very low power dissipation and can be used to improve efficiency in some systems.
The working principle of a FET is based on the application of an electric field to the gate of the device. This electric field causes the device to become conductive, allowing current to flow from the source to the drain. The gate voltage of a FET controls the resistance, allowing the current to be controlled. In the ZVN4306ASTZ, the gate voltage is typically between -4V and 12V.
The ZVN4306ASTZ is an ideal device for power switching applications, voltage level regulators, and line accuracy devices. It is a reliable and cost-effective device for many commercial and industrial applications, offering great benefits for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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ZVN4206ASTOB | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 0.6A TO92... |
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ZVN4206GVTC | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 1A SOT223... |
ZVN4210ASTOB | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 450MA TO... |
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ZVN4306ASTOA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 1.1A TO92... |
ZVN4306ASTOB | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 1.1A TO92... |
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ZVN4306AVSTOA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 1.1A TO92... |
ZVN4306AVSTOB | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 1.1A TO92... |
ZVN4306AVSTZ | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 1.1A TO92... |
ZVN4306GTC | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 2.1A SOT2... |
ZVN4306GVTC | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 2.1A SOT2... |
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ZVN4424ASTOB | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 240V 0.26A TO... |
ZVN4424GTC | Diodes Incor... | -- | 1000 | MOSFET N-CH 240V 0.5A SOT... |
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ZVN4206AVSTOA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 600MA TO9... |
ZVN4424ZTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 240V 300MA SO... |
ZVN4206A | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 600MA TO9... |
ZVN4206NTA | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 60V SOT-223-... |
ZVN4206NTC | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 60V SOT-223-... |
ZVN4424GTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 240V 500MA SO... |
ZVN4306GTA | Diodes Incor... | -- | 1000 | MOSFET N-CH 60V 2.1A SOT2... |
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