Allicdata Part #: | ZVN4525E6TC-ND |
Manufacturer Part#: |
ZVN4525E6TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 250V 0.23A SOT23-6 |
More Detail: | N-Channel 250V 230mA (Ta) 1.1W (Ta) Surface Mount ... |
DataSheet: | ZVN4525E6TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 230mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.4V, 10V |
Rds On (Max) @ Id, Vgs: | 8.5 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 1.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 3.65nC @ 10V |
Vgs (Max): | ±40V |
Input Capacitance (Ciss) (Max) @ Vds: | 72pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-6 |
Package / Case: | SOT-23-6 |
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The ZVN4525E6TC is a high-performance N-channel MOSFET (metal–oxide–semiconductor field-effect transistor) designed for use in power management applications, such as dc-dc converters and boost converters. It is a high-performance, highly efficient, and cost-effective transistor with a low gate charge. This allows it to deliver a great deal of power in a very small package.
A MOSFET is an analogue device. It works by varying the current through a channel of semiconductor material. The current is controlled by an electric field which is generated by the gate of the MOSFET. The gate voltage is usually measured in volts, and is passed to the gate of the MOSFET to create an electric field. When the electric field is applied, current will flow through the channel of semiconductor material. The amount of current that flows can be controlled by adjusting the gate voltage.
The ZVN4525E6TC is a low-voltage N-channel enhancement-mode transistor. This means that the gate should be connected to a voltage source for the channel to conduct current. The gate voltage should be higher than the source voltage for the channel to be in the on-state. This transistor is used in applications where there is no need to change the direction of current flow. This makes it well-suited to switch-mode power supplies, as it allows fast switching at low gate voltages.
The ZVN4525E6TCTransistorhas a maximum drain-source breakdown voltage of 25V, and a maximum drain current of 32A. This high current makes the transistor well-suited to power management applications, as it can provide high power at low voltages. The device also has a low gate charge of 5.2nC, meaning it can be switched quickly and efficiently. The low gate charge also makes it well-suited to high-frequency applications.
The ZVN4525E6TC is mainly used in boost converters, which are commonly used to provide power for low-voltage systems such as mobile phones, laptops, and embedded devices. It is also used for battery management, as its low gate charge and low on-resistance make it well-suited to applications where current must be switched quickly and efficiently. Additionally, The ZVN4525E6TC is used in dc-dc converters and other power management circuits, where it can provide a great deal of power in a small package.
In summary, the ZVN4525E6TC is a high-performanceN-channel MOSFET designed for use in power management applications. It has a low gate charge and a low on-resistance, which make it well-suited to applications where current must be switched quickly and efficiently. Additionally, its high drain current makes it well-suited to boost and dc-dc converter applications. This makes it a cost-effective and efficient power management solution.
The specific data is subject to PDF, and the above content is for reference
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