ZVN4306A

Series:	--
Packaging:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	330 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:	3V @ 1mA
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	350pF @ 25V
FET Feature:	--
Power Dissipation (Max):	850mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-92-3
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)

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ZVN4306A Application Field and Working Principle

The ZVN4306A is a N-channel enhancement mode MOSFET (metal oxide semiconductor field-effect transistor). This type of MOSFET is widely used in applications such as power supply circuits, switch-mode power supplies, industrial electronic equipment, etc. In this article, we will discuss the application field and working principle of the ZVN4306A.

Application Field

The ZVN4306A MOSFET is a voltage-controlled transistor, which is widely used in electronic circuits. It has a low on-resistance value, so it can easily switch on and off high currents. This makes it ideal for applications such as power supply circuits, switch-mode power supplies, DC-DC converter circuits, motor driver circuits, etc. The ZVN4306A is also used in display drivers, audio amplifiers, digital logic circuits, and many other applications.

Working Principle

A MOSFET is a voltage-controlled device, meaning its on-state is determined by the voltage applied to it. The ZVN4306A contains three semiconductor terminals: gate, drain, and source. When the gate voltage is higher than the threshold voltage, the MOSFET is in the on-state and current can flow from the drain to the source. The on-state resistance of the ZVN4306A is very low, allowing for higher switching frequencies and a higher current capacity.The ZVN4306A also features low gate leakage current, which is important in applications where power consumption is an issue. Additionally, the ZVN4306A has excellent immunity to electromagnetic interference, which makes it suitable for use in electronic equipment.

Conclusion

The ZVN4306A MOSFET is a versatile device suitable for a wide array of applications. It has a low on-state resistance and low gate leakage current, making it ideal for power supply circuits, switch-mode power supplies, and motor driver circuits. Additionally, the ZVN4306A has excellent immunity to electromagnetic interference, making it suitable for use in electronic equipment.

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