ZVN4306GTA Discrete Semiconductor Products

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The ZVN4306GTA is an N-channel enhancement mode MOSFET that is often used in digital switching applications. It is a low-cost MOSFET and is a popular choice amongst engineers and designers. Its features include an on-state resistance of 120 ohms, the ability to handle up to 10A of current, a threshold voltage of 2.5V, and a maximum gate-source voltage of 20V.

These features make the ZVN4306GTA well suited for use in a variety of digital switching applications including signal switching, power switching, and load switching. In addition, it can also be used in a wide range of analog applications such as low voltage differential signaling, current sensing, and noise reduction. It is an ideal solution for designing high-efficiency power electronics.

The ZVN4306GTA has a simple working principle. It operates on the principle of the electric field effect, whereby a voltage applied across a gate and source modulates the current flowing between the drain and source by controlling the width of the depletion region around the drain. With a suitable gate-source voltage, a well-defined “on” drain-source current path can be created and with a suppressed gate-source voltage, the current path remains blocked, preventing any current flow.

The MOSFET offers excellent performance in switching applications due to its fast switching speed and low on-state resistance. It is protected from thermally induced damages in its maximum operating temperature of 175°C and from electrostatic damage with its ESD protection up to 2000V.

In conclusion, the ZVN4306GTA is a low-cost and highly efficient N-channel enhancement mode MOSFET that is suitable for a variety of digital and analog electrical applications. Its features such as a low on-state resistance, fast switching speeds and ESD protection, make it an ideal choice for high-performance and high-efficiency power electronics applications.

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