Allicdata Part #: | ZVN4306ASTOA-ND |
Manufacturer Part#: |
ZVN4306ASTOA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 1.1A TO92-3 |
More Detail: | N-Channel 60V 1.1A (Ta) 850mW (Ta) Through Hole E-... |
DataSheet: | ZVN4306ASTOA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 1.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 330 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 850mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The ZVN4306A is a depletion-mode N-channel MOSFET that has been specifically designed for low-power consumption applications. It features a very low on-state resistance that is mainly dependent on the gate-source voltage and the gate-drain voltage. Due to its unique design, the device has almost no capacitance effects, which keeps it suitable for very low-power applications.
The ZVN4306A is a simple and effective device that is ideal for many applications. It’s mainly used to switch, amplify, or even buffer electronics currents and signals. It is highly resistant to thermal shutdown and has excellent performance and power efficiency even in high-power applications. These features, combined with its low cost, make it a popular choice for many applications.
The ZVN4306A is also known for its high surge performance and for its fast switching capabilities. Its speed and performance make it an excellent choice for power management applications as well as for high-speed communication applications. Its on-resistance is very low, making it ideal for applications where power conservation is paramount.
The outstanding features of the ZVN4306A make it a popular choice for applications that require low power consumption and high speed switching. This includes applications such as DC-DC converters, LED lighting, LED drivers, and motor control circuits. Its small size, low power dissipation, low noise, and wide range of operating temperatures makes it an ideal choice for many portable and automotive applications.
The ZVN4306A works on the concept of n-channel enhancement or depletion mode. It is designed to operate in the enhancement or depletion mode depending on the gate-to-source voltage applied to the device. When a positive voltage is applied on the gate, an inversion layer is formed between the drain and the source of the device and this reduces the resistance between them. When a negative voltage is applied to the gate, the inversion layer is removed and the resistance between the drain and the source of the device increases.
The ZVN4406A is a low-power MOSFET that can easily be integrated into the circuitry of various systems, making it an ideal choice for numerous applications. It offers excellent high-frequency performance, low on-state resistance, and low-power characteristics that help conserve power and reduce heat generation in high-power applications. Due to its small size, high-speed operation, and low power dissipation, the ZVN4306A is an excellent choice for high-speed, low-power designs.
The specific data is subject to PDF, and the above content is for reference
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