ZVN4306AVSTOA Allicdata Electronics
Allicdata Part #:

ZVN4306AVSTOA-ND

Manufacturer Part#:

ZVN4306AVSTOA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 1.1A TO92-3
More Detail: N-Channel 60V 1.1A (Ta) 850mW (Ta) Through Hole E-...
DataSheet: ZVN4306AVSTOA datasheetZVN4306AVSTOA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
FET Feature: --
Power Dissipation (Max): 850mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: E-Line (TO-92 compatible)
Package / Case: E-Line-3
Description

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The ZVN4306AVSTOA is a N-channel depletion mode MOSFET that offers both high input impedance and high speed switching capabilities. Its primary application fields include voltage regulation, power conversion, motor control, etc. It is normally applied in a push-pull arrangement with a complimentary P-channel MOSFET for high-voltage/high-current operations. In addition, the ZVN4306AVSTOA can be found in circuits such as DC/DC converters, AC/DC converters, load switch circuits, etc.

The ZVN4306AVSTOA is a vertical single P-channel depletion mode MOSFET manufactured by Vishay Semiconductor. It is considered a low-capacitance and low-gate voltage device, with a remarkable power handling ability in a small form factor. The device features a Vishay Process Design Kit designed for operating temperature up to +175°C for power handling applications.

The ZVN4306AVSTOA has a drain-source breakdown voltage of 30V and an RDS(ON) (max) of 9.4mΩ. It is also characterized by a VGS(th) of -3V, a Ciss adjustable between 500pF and 1nF, and a maximum drain current of 8.5A. Furthermore, the ZVN4306AVSTOA is equipped with a small gate charge plus a low gate threshold voltage, which enable fast switching times.

The operating principle of the ZVN4306AVSTOA is based on the well-known MOSFET or metal oxide semiconductor field effect transistor. In contrast to junction field effect transistors, MOSFETs offer several advantages in terms of operation, such as higher switching speed and lower power dissipation. The MOSFET consists of four terminals, the source, gate, drain, and the body (or substrate). An electric potential is applied to the gate that changes the conductivity of the channel formed between the source and the drain. Applying a positive potential increases the conductivity, while applying a negative potential decreases the conductivity.

In addition, the ZVN4306AVSTOA is designed for quick and easy installation, as it comes in a TO-220/TO-92 package. It can be used as a single device or multiple devices in parallel for applications that require larger output current handling capability. Typical applications for the ZVN4306AVSTOA include DC/DC converters, load switch circuits, AC/DC converters, voltage control circuits, and motor control circuits.

To conclude, the ZVN4306AVSTOA is an N-channel depletion mode MOSFET that offers excellent performance in applications such as voltage regulation, power conversion, or motor control. It utilizes the well-known MOSFET operational principle and provides a high input impedance and high speed switching capabilities. Moreover, the device can be found in various packages like TO-220/TO-92, and it is easy to install. In short, the ZVN4306AVSTOA is a reliable component for complex applications.

The specific data is subject to PDF, and the above content is for reference

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