ZVN4106FTA Allicdata Electronics

ZVN4106FTA Discrete Semiconductor Products

Allicdata Part #:

ZVN4106FTR-ND

Manufacturer Part#:

ZVN4106FTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 200MA SOT23-3
More Detail: N-Channel 60V 200mA (Ta) 350mW (Ta) Surface Mount ...
DataSheet: ZVN4106FTA datasheetZVN4106FTA Datasheet/PDF
Quantity: 15000
Stock 15000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The ZVN4106FTA is a dual channel, depleted mode, depletion type, N channel Field Effect Transistor. It is manufactured using advanced trench silicon technologies for low RDS(on) and low gate charge. ZVN4106FTA, also called Power MOSFET, has a large coverage of source-drain breakdown voltage range, which makes it suitable for various applications. The ZVN4106FTA feature fast switching capabilities and high output current, which makes it suitable for power supply and motor control applications.

The structure of Field Effect Transistors is based on the principle of "field effect", which means the effect of the electric field generated by an applied voltage to the field regions creates a current path between the source and drain of the device. This electric field creates an additional electric field, which is known as the depletion layer. The amount of current which flows through the transistor is controlled by the strength of the electric field created in the field regions. The ZVN4106FTA uses this field effect principle to control the current between the source and the drain.

The ZVN4106FTA is designed for power supply and motor control applications. It features fast switching capability, low gate charge, low on-resistance and high output current. It is suitable for providing single or dual channel power supplies, power conversion and motor control. It can also be used for driving high power loads, such as white goods and consumer electronics.

The ZVN4106FTA has an operating temperature range of -55 °C to +125 °C and can be used in applications requiring up to 10 mΩ drain-source on-resistance. The breakdown voltage of the device is rated at 100V, which makes it suitable for high voltage applications. It also has a high avalanche energy rating, making it ideal for fast transient response applications.

The ZVN4106FTA is a versatile device and can be used in a variety of applications, such as DC to DC converters, motor drivers, automotive electronics and power-management systems. It can also be used in high voltage applications such as lighting control and solar cell inverters.

The ZVN4106FTA is also an environmentally friendly device as it does not contain any hazardous materials. It is an RoHS compliant device and is capable of meeting the requirements of RoHS directive.

In summary, the ZVN4106FTA is a dual channel depletion type, N channel Field Effect Transistor. It is designed for power supply and motor control applications and has fast switching capabilities and high output current. It has a wide range of application fields, including DC-DC converters, motor drivers and high voltage applications. It is also an environmentally friendly device and is RoHS compliant.

The specific data is subject to PDF, and the above content is for reference

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