ZVN4206GTC Allicdata Electronics
Allicdata Part #:

ZVN4206GTC-ND

Manufacturer Part#:

ZVN4206GTC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 1A SOT223
More Detail: N-Channel 60V 1A (Ta) 2W (Ta) Surface Mount SOT-22...
DataSheet: ZVN4206GTC datasheetZVN4206GTC Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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ZVN4206GTC is a single enhancement mode, N-channel Zetex MOSFET technology available in space-saving industry-standard SSOT-3 surface-mount packages. This transistor is ideal for general switching and amplification applications in automotive and industrial systems.

The ZVN4206GTC is a general purpose MOSFET with minimum on-state resistance and low gate charge. It is optimized for battery protection, load switching, RF control, and other high frequency applications.

Application Field

The ZVN4206GTC is ideally suited for a variety of applications, including Power Control, Memory, Solenoids and Lamps, Off-line Control, Motor Control, Mobile Phone, Automotive, and Telecommunications base stations. The excellent RDS(ON) figure and low gate charge allow the performance of this device to be optimized for a variety of applications.

The ZVN4206GTC can be used as a high side or low side battery discharge switch in automotive applications. With its low on-state resistance (RDS(ON)) of 3.2 Ω, it can be used as a load switch for lamp and solenoid applications, and as an on-off switch for power control in mobile phones and base station applications.

In automotive and industrial applications, the ZVN4206GTC is ideal for use as an amplifier for memory, RF control and high frequency applications. This device can be used to create high speed switching up to 15V and is rated for temperatures up to 175°C.

Working Principle

The ZVN4206GTC works on a principle known as metal-oxide-semiconductor field-effect-transistor (MOSFET) technology. This technology acts as a kind of electronic switch which can be used to control the flow of electricity in a circuit.

The ZVN4206GTC MOSFET consists of two regions, the source and the drain, which are separated by a conducting channel. When an externally applied voltage is applied across the source and drain, electric current will flow through the channel. This is known as the "on-state" of the MOSFET. The MOSFET can be switched off by reducing the voltage, cut off the electric current.

An additional layer of insulation, the gate, is placed between the source and the drain, which can be used to control the electric current flowing through the channel. Applying a positive voltage to the gate increases electric current, while applying a negative voltage reduces electric current. This can be used to control exactly how much electricity is flowing through the MOSFET.

The ZVN4206GTC is designed to work with a voltage range of 5 to 15V and can handle up to 0.5 Amps of continuous current. It is an ideal device for battery protection, load switching, and other high frequency applications.

The specific data is subject to PDF, and the above content is for reference

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