ZVN4206AVSTZ Allicdata Electronics

ZVN4206AVSTZ Discrete Semiconductor Products

Allicdata Part #:

ZVN4206AVSTB-ND

Manufacturer Part#:

ZVN4206AVSTZ

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 0.6A TO92-3
More Detail: N-Channel 60V 600mA (Ta) 700mW (Ta) Through Hole E...
DataSheet: ZVN4206AVSTZ datasheetZVN4206AVSTZ Datasheet/PDF
Quantity: 1000
2000 +: $ 0.19960
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Box (TB) 
Description

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,

The ZVN4206AVSTZ transistor is a single N-channel enhancement-mode MOSFET transistor-the most common type of FET transistor-with a low 0.9 V electrical threshold voltage. This transistor has a drain-source current of -6.1 A and is commonly used in applications that require low threshold voltage and high current performance.

The ZVN4206AVSTZ transistor\'s gate structure is called an enhancement-mode gate, which means that the transistor\'s gate voltage needs to be more than the gate-source threshold voltage in order to create a conducting channel between the drain and the source. This enhancement-mode gate makes this type of transistor useful in applications that require switching and amplifier circuits. Additionally, its low 0.9 V gate-source threshold voltage makes it easy to design cascodes and other switch-mode circuits.

This transistor is commonly used in power management systems, LED lighting circuits, and other small signal circuits that require high current and switching speed. In addition to these applications, this transistor is also used in analog circuit design, since its low gate-source voltage allows for different circuit designs to be implemented. Since this transistor has a drain-source current of -6.1 A, it is suitable for usage in high current circuits.

The ZVN4206AVSTZ transistor has a maximum drain-source voltage of 30 V, making it suitable for usage in medium voltage switching applications. For higher voltage applications, the ZVN4206AVSTZ transistor can be used in conjunction with other transistors to provide higher switching current levels. For example, the transistor can be paired with a diode-connected p-channel transistor to provide increased current levels when switching from the drain to the source.

Overall, the ZVN4206AVSTZ transistor is an example of an enhancement-mode MOSFET that is capable of handling high current levels and applications requiring switching and amplifier circuits. This transistor also features a 0.9 V gate-source threshold voltage and a maximum drain-source voltage of 30 V, making it suitable for usage in a wide variety of power management and LED lighting circuits. Additionally, the transistor can be paired with other transistors to provide increased current levels when switching from the drain to the source in higher voltage applications.

The specific data is subject to PDF, and the above content is for reference

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