Allicdata Part #: | ZVN4310ASTOB-ND |
Manufacturer Part#: |
ZVN4310ASTOB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 0.9A TO92-3 |
More Detail: | N-Channel 100V 900mA (Ta) 850mW (Ta) Through Hole ... |
DataSheet: | ZVN4310ASTOB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 900mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 850mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
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The ZVN4310AS MOSFET is a unique type of field effect transistor (FET) that is commonly used in modern circuits. It is a single, long channel density n-channel, low threshold voltage MOSFET, which is able to operate at high frequencies and power levels. Its low on-state resistance and high di/dt capability make it an ideal device for a variety of high power applications, such as motor drive and power management circuits.
The simplicity and reliability of the ZVN4310AS MOSFET make it a highly sought after component for designers looking to reduce the complexity of their circuit designs. Its key features include a high voltage breakdown rating, low on-resistance, low gate-threshold voltage, high speed switching and high current capability. Additionally, the device offers a variety of useful features, such as a high-dV/dt robustness and a self-protected package.
The ZVN4310AS MOSFET is available in a variety of packages, including the TO-263, SOP-8, and SOT-23. The various package options offer flexibility in the design of the end product, as the device can be integrated into the circuit board in a variety of ways. The TO-263 package provides an excellent choice for space-constrained applications.
The ZVN4310AS MOSFET is designed to act as a low-resistance switch, allowing current from the drainsource (D-S) region to flow to the gate terminal when a small voltage is applied to the gate terminal. When the voltage applied to the gate terminal reaches or exceeds the gate threshold voltage, the drain-source current begins to flow, bringing the FET into the “on-state”. Conversely, if the voltage at the gate terminal drops below the gate threshold voltage, the FET will turn ‘off”, and the drain-source current will not flow.
The ZVN4310AS MOSFET is most often used in applications that require high voltages and high currents, such as motor drives, battery management, power converters, solar inverters, and motor controllers. Due to its low on-state resistance, the device is well-suited for high-frequency switching with low switching losses. Furthermore, due to its high di/dt capability, the device is highly reliable and capable of fast chargedischarge cycles.
In conclusion, the ZVN4310AS MOSFET is a highly versatile device with numerous potential applications. Its low on-state resistance, high di/dt capability, and robust package make it an excellent choice for high voltage, high power applications. Its variety of useful features, such as robust dV/dt performance, self-protected package, and flexibility in design, make it an ideal choice for designers looking to add reliable and efficient control to their circuit designs.
The specific data is subject to PDF, and the above content is for reference
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