ZVN4206GVTA Discrete Semiconductor Products |
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Allicdata Part #: | ZVN4206GVTR-ND |
Manufacturer Part#: |
ZVN4206GVTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 1A SOT223 |
More Detail: | N-Channel 60V 1A (Ta) 2W (Ta) Surface Mount SOT-22... |
DataSheet: | ZVN4206GVTA Datasheet/PDF |
Quantity: | 6000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 100pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZVN4206GVTA is a enhancement mode N-Channel MOSFET with a very low on-resistance.It is ideal for use in high-side switching applications such as LED lighting, motor control, and power conversion. It is suitable for both automotive and industrial applications.This MOSFET has wide Gate Voltage range and high peak current capability. It also offers a lower Gate drive voltage and improved breakdown voltage.
Application Field
ZVN4206GVTA is a N-Channel MOSFET that is used as a switch in various types of circuits. It can be used in high-side switching applications such as LED lighting, motor control and power conversion. The transistor is designed to handle relatively large currents and can be used to switch on and off large loads in high voltage environments.
The ZVN4206GVTA is also suitable for automotive applications. It can be used in a variety of vehicle systems such as engine management, starting and charging, air conditioning and lighting. It can also be used in industrial applications as it offers high efficiency, low power losses and excellent protection features.
Working Principle
The ZVN4206GVTA is an N-Channel MOSFET with a gate Electrode and a drain electrode. The n-channel MOSFET works on the principle of four-layer construction, in which the negative terminal of the gate is connected to the negative terminal of the source and the positive terminal of the gate is connected to the positive terminal of the source. This allows the transistor to control the flow of current by turning on or off the switch between source and drain of the transistor.
When a positive voltage is applied at the gate electrode of the ZVN4206GVTA, the electric field builds between the gate and the source. This field causes the electrons to move away from the gate and towards the drain, turning the switch on. When the voltage is removed, the electrons move away from the drain, turning the switch off. This is the principle on which the MOSFET operates.
The ZVN4206GVTA is an efficient and versatile device that can be used in a variety of applications. It offers high switching speed, low on-resistance, a wide gate voltage range, and improved breakdown voltage.
The specific data is subject to PDF, and the above content is for reference
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