32-pin active filter ic - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IPZ40N04S58R4AT MA1TR-ND	IPZ40N04S58R4AT MA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.4V @ 10A Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 771pF @ 25V Power Dissipation (Max): 34W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-32 Package / Case: 8-PowerTDFN	5000 Order	5000+: $0.2086
ZVP0120AS-ND	ZVP0120AS	Diodes Incorporated	View more Packaging: Bulk Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 110mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32 Ohm @ 125mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Power Dissipation (Max): 700mW (Ta) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	1+: $0
568-9730-5-ND	BUK9535-55A,127	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 1173pF @ 25V Power Dissipation (Max): 85W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
SI8475EDB-T1-E1 TR-ND	SI8475EDB-T1-E1	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Vgs (Max): 12V Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	1000 Order	3000+: $0.1907
SCTWA20N120-ND	SCTWA20N120	STMicroelectronics	View more Series: * Part Status: Active	1000 Order	600+: $5.8373
SCTWA30N120-ND	SCTWA30N120	STMicroelectronics	View more Series: * Part Status: Active	1000 Order	600+: $12.1716
SCTWA10N120-ND	SCTWA10N120	STMicroelectronics	View more Series: * Part Status: Active	1000 Order	600+: $4.7867
IXTA64N10L2-ND	IXTA64N10L2	IXYS	View more Series: Linear L2 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 25V Power Dissipation (Max): 357W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	117 Order	1+: $7.6797 50+: $6.2974 100+: $5.683 500+: $4.7614
1727-2304-2-ND	PMV27UPER	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 10V Power Dissipation (Max): 490mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	3000+: $0.0891
SQ3418EV-T1_GE3 -ND	SQ3418EV-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 678pF @ 20V Power Dissipation (Max): 5W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	3000+: $0.1617
SI2333DS-T1-E3T R-ND	SI2333DS-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V Power Dissipation (Max): 750mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	183000 Order	--
1727-1355-2-ND	PMN27UP,115	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 5.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 10V Power Dissipation (Max): 540mW (Ta), 6.25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	1000 Order	3000+: $0.1559
SI2333DS-T1-GE3 TR-ND	SI2333DS-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V Power Dissipation (Max): 750mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 Base Part Number: SI2333	6000 Order	--
IXTT80N20L-ND	IXTT80N20L	IXYS	View more Series: Linear Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 25V Power Dissipation (Max): 520W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, DPak (2 Leads + Tab), TO-268AA	1000 Order	30+: $9.0741
BSC320N20NS3GAT MA1TR-ND	BSC320N20NS3GAT MA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 4V @ 90A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	--
IXTH64N10L2-ND	IXTH64N10L2	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 25V Power Dissipation (Max): 357W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	30+: $4.0427
DMP1045UFY4-7DI TR-ND	DMP1045UFY4-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 23.7nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1291pF @ 10V Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN	6000 Order	--
785-1392-2-ND	AON2405	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 10V Power Dissipation (Max): 2.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN-EP (2x2) Package / Case: 6-UDFN Exposed Pad	1000 Order	--
IPP320N20N3GXKS A1-ND	IPP320N20N3GXKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 4V @ 90A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V Power Dissipation (Max): 136W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1574 Order	--
DMP3028LFDE-7DI TR-ND	DMP3028LFDE-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1241pF @ 15V Power Dissipation (Max): 660mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-UDFN Exposed Pad	1000 Order	--
1727-2529-2-ND	PMV27UPEAR	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 10V Power Dissipation (Max): 490mW (Ta), 4.15W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	3000+: $0.0918
TSM320N03CXRFGT R-ND	TSM320N03CX RFG	Taiwan Semiconductor Corporation	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 15V Power Dissipation (Max): 1.8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
AON2392-ND	AON2392	Alpha & Omega Semiconductor Inc.	View more Series: AlphaSGT Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 50V Power Dissipation (Max): 4.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (2x2) Package / Case: 8-VFDFN Exposed Pad	1000 Order	3000+: $0.1733
DMP2040UFDF-13- ND	DMP2040UFDF-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 8.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 8V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	1000 Order	10000+: $0.0954
SI4431CDY-T1-GE 3TR-ND	SI4431CDY-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1006pF @ 15V Power Dissipation (Max): 2.5W (Ta), 4.2W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	50000 Order	--
1727-2530-2-ND	PMV28UNEAR	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 4.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V Power Dissipation (Max): 510mW (Ta), 3.9W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	3000+: $0.1072
IXTA06N120P-ND	IXTA06N120P	IXYS	View more Series: PolarVHV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 600mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32 Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 50A Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Power Dissipation (Max): 42W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	2041 Order	--
497-13603-5-ND	STW78N65M5	STMicroelectronics	View more Series: Automotive, AEC-Q101, MDmesh V Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 34.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 203nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 100V Power Dissipation (Max): 450W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	463 Order	1+: $16.6509 10+: $15.4003 100+: $13.1527
SI2365EDS-T1-GE 3TR-ND	SI2365EDS-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 5.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V Vgs (Max): 8V Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236 Package / Case: TO-236-3, SC-59, SOT-23-3	15000 Order	--
DMP3037LSS-13DI TR-ND	DMP3037LSS-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19.3nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 931pF @ 15V Power Dissipation (Max): 1.2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
785-1284-2-ND	AO4411	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
1727-7670-2-ND	BUK6Y32-60PX	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 52.9nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2.59nF @ 30V Power Dissipation (Max): 106W (Ta) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669, 4-LFPAK	1000 Order	1500+: $0.3586
IRFB61N15DPBF-N D	IRFB61N15DPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V Power Dissipation (Max): 2.4W (Ta), 330W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	2449 Order	--
DMP2040UFDF-7DI TR-ND	DMP2040UFDF-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 8.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 8V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	3000 Order	--
SI8499DB-T2-E1T R-ND	SI8499DB-T2-E1	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-Micro Foot (1.5x1) Package / Case: 6-MICRO FOOT	1000 Order	--
SI4431CDY-T1-E3 TR-ND	SI4431CDY-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1006pF @ 15V Power Dissipation (Max): 2.5W (Ta), 4.2W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.3144
IRL80HS120TR-ND	IRL80HS120	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2V @ 10A Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Power Dissipation (Max): 11.5W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-PQFN (2x2) Package / Case: 6-VDFN Exposed Pad	1000 Order	--
1727-2305-2-ND	PMV30UN2R	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 32 mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V Power Dissipation (Max): 490mW (Ta), 5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	90000 Order	3000+: $0.0825
785-1395-2-ND	AON2409	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V Power Dissipation (Max): 2.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN-EP (2x2) Package / Case: 6-UDFN Exposed Pad	1000 Order	--
1727-7196-2-ND	BUK9635-55A,118	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 32 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 1173pF @ 25V Power Dissipation (Max): 85W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $0.3103

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