| Allicdata Part #: | IXTT80N20L-ND |
| Manufacturer Part#: |
IXTT80N20L |
| Price: | $ 9.98 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 80A TO-268 |
| More Detail: | N-Channel 200V 80A (Tc) 520W (Tc) Surface Mount TO... |
| DataSheet: |  IXTT80N20L Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 9.07410 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package: | TO-268 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 520W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6160pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
| Series: | Linear™ |
| Rds On (Max) @ Id, Vgs: | 32 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTT80N20L is a high voltage and high power device that is used in high performance DC/DC converters. It is a highly efficient, voltage controlled, and low-on-resistance FET (Field Effect Transistor) that is used in DC/DC converters, high-power switching applications, DC-DC converters, and lighting systems.
The IXTT80N20L is a specific type of field effect transistor (FET), more specifically a Metal Oxide Semiconductor FET (MOSFET). MOSFETs are highly advanced devices that offer a number of benefits in comparison to BJT (Bipolar Junction Transistor) transistors. They are much faster, consume less power, and are more reliable. This makes them ideal for applications that require high speed, high power, and high efficiency.
The IXTT80N20L has an on-resistance of only 0.265 milliohms and is designed for a maximum DC voltage of 200V. It is also a low-voltage MOSFET that offers a combination of low output capacitance, low on-resistance, and a high drain-source breakdown voltage. The device can handle up to 80A of continuous drain current, suitable for most high power switching applications.
The main application field of the IXTT80N20L is high-performance DC/DC converters. It can be used to power a wide range of circuitry, from small voltage regulators to high-power DC/DC converters. It is particularly well suited for applications that require high power efficiency and high power density. In such applications, the IXTT80N20L can enable significantly greater power efficiency when compared to other MOSFETs.
The working principle of the IXTT80N20L is that it consists of semiconductor material with three terminals, Source, Drain, and Gate. When a voltage is applied to the gate, the current flowing from source to drain is directly proportional to the gate voltage. This allows for the current flowing through the device to be controlled by the gate voltage and, as a result, makes it a voltage-controlled device.
In addition to its application in high-performance DC/DC converters, the IXTT80N20L can also be used for high-power switching applications and lighting systems. It features an integrated fast-switching and low-dissipation structure that prevents damage to the device due to switching losses. This makes it an ideal choice for applications where quick and reliable switching is required.
Overall, the IXTT80N20L is a highly efficient, voltage controlled, and low-on-resistance MOSFET that is suitable for high-power switching applications, DC/DC converters, and lighting systems. Thanks to its low output capacitance, low on-resistance, and high drain-source breakdown voltage, it can offer significantly improved power efficiency when compared to other MOSFETs.
The specific data is subject to PDF, and the above content is for reference
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