SI2333DS-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI2333DS-T1-E3 is a N-Channel enhancement-mode vertical DMOS FET transistor that belongs to the single FETs and MOSFETs family. This transistor is designed for use as an amplifier, switch, or for in power switching applications. It consists of an n-channel and p-channel, both of which can be separated from each other to achieve the required configuration.

The SI2333DS-T1-E3 is capable of handling up to 25V of drain-to-source voltage and has a 1A drain-to-source current capability. It has an on resistance of 0.115 Ohms and a maximum output power of 25W. It has a high-speed switching capability and is suitable for applications such as DC-DC converters, industrial controls, home appliances, and communication equipment.

The main application field of the SI2333DS-T1-E3 is in the power switching market. The transistor is particularly well suited for high frequency and high power applications, such as high-voltage motor control and DC-DC converters. It has a low gate-source threshold voltage, which makes it ideal for low gate-source voltage applications such as microprocessors and battery-operated circuits.

The working principle of the SI2333DS-T1-E3 is based on the flow of electrons through a semiconductor channel with a gate voltage being applied. The gate voltage is applied to the gate terminal and causes an electric field to be created, which attracts the electrons flowing through the channel to the gate terminal. This creates a conductive channel called the inversion layer, which allows current to flow between the drain and the source when a voltage is applied to the drain. The drain voltage controls the current, and the amount of current flowing in the channel is determined by the gate voltage.

The SI2333DS-T1-E3 provides improved performance compared to standard MOSFETs, due to its high switching speed and low on-resistance. The transistor also has excellent drive capability, which enables high-speed operation and improved response time. Additionally, the device is designed for low-noise operation and is capable of operation at extremely high frequencies.

The SI2333DS-T1-E3 transistor is a powerful and versatile solution for a wide variety of power switching applications, offering improved performance and high-speed operation compared to standard MOSFETs. The device is capable of high-speed switching, low on-resistance, and excellent drive capability, making it an ideal choice for applications requiring faster response times and improved power efficiency.

The specific data is subject to PDF, and the above content is for reference