Allicdata Part #: | 568-9730-5-ND |
Manufacturer Part#: |
BUK9535-55A,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 55V 34A TO220AB |
More Detail: | N-Channel 55V 34A (Tc) 85W (Tc) Through Hole TO-22... |
DataSheet: | BUK9535-55A,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1173pF @ 25V |
Vgs (Max): | ±10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 32 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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A BUK9535-55A 127 is a type of Field-Effect Transistor (FET). Specifically, it is a Metal-Oxide Semiconductor FET, or MOSFET. A single channel is present in the design.
FETs are three-terminal, voltage-controlled devices, which have an insulated gate along with a source and drain. The insulated gate provides a high input impedance, with the source and drain forming the \'output\'. FETs are divided into two main types: depletion mode and enhancement mode.
In depletion mode, the FET is \'on\' when no voltage is applied to the gate. An increase in voltage produces an opposite effect and causes the FET to turn \'off\'. It is essentially the opposite of an enhancement mode FET, which is \'off\' when no voltage is applied, and turns \'on\' with an increase in voltage.
In a MOSFET, the gate contains a metal oxide. When voltage is applied to the gate, it causes the oxide to change its electrical properties, allowing the FET to turn \'on\' or \'off\'. This voltage-controlled behavior is what makes a MOSFET so useful in the design of switching circuits. MOSFETs come in two basic types: N-channel and P-channel. The BUK 9535-55A is an N-channel type.
The BUK9535-55A 127 is a single-channel MOSFET that uses a voltage applied to its gate to turn \'on\' or \'off\' the conduction of electricity between its source and drain. It is designed for use in low voltage and high frequency applications such as power supplies, DC-DC converters, and frequency converters. It is also used in audio amplifiers and other small signal applications.
The device is designed to handle up to 11.5 volts of continuous drain-source voltage (also known as the \'blocking voltage\') and up to 5 amperes of continuous drain-source current. The FET also has a typical on-state resistance of 11.1 ohms and a maximum junction temperature of 175ꞌC.
In operation, a voltage applied to the gate creates a conductive \'channel\' between the source and the drain, and allows current to flow. The magnitude of the current is dependent on the type of load connected to the FET – the higher the voltage, the higher the current. Conversely, when no voltage is applied, the device is said to be \'off\' and no current flows, thus \'blocking\' any conduction.
The BUK9535-55A 127 single-channel MOSFET is a versatile device that can be used in a variety of applications. Its high current and low on-state resistance make it ideal for use in power switching and conversion, as well as various other applications.
The specific data is subject to PDF, and the above content is for reference
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