BUK6Y32-60PX Allicdata Electronics

BUK6Y32-60PX Discrete Semiconductor Products

Allicdata Part #:

1727-7670-2-ND

Manufacturer Part#:

BUK6Y32-60PX

Price: $ 0.40
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: BUK6Y32-60P/SOT669/LFPAK
More Detail: P-Channel 60V 40A (Ta) 106W (Ta) Surface Mount LFP...
DataSheet: BUK6Y32-60PX datasheetBUK6Y32-60PX Datasheet/PDF
Quantity: 1000
1500 +: $ 0.35863
Stock 1000Can Ship Immediately
$ 0.4
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 106W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2.59nF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 52.9nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BUK6Y32-60PX belongs to Bosch’s range of power transistors and is typically used within industrial instrumentation and automation applications. This particular type is an insulated-gate bipolar transistor device with vertical channel, which refers to its silicon wafer layout and construction.

Basically, an insulated-gate bipolar transistor is a type of four-layer semiconductor device which, in principle, combines the characteristics of a classical bipolar junction transistor and a field effect transistor. Its main advantage, compared to a classical bipolar junction transistor, lies in its output characteristics. This type of transistor has a very fast switching time and high power gain, making it extremely useful for high frequency and switching applications.

The BUK6Y32-60PX in particular is a vertical, insulated-gate bipolar transistor with a nominal collector-emitter voltage of 600V and a collector current of 6A. It also has a 2.5V gate-emitter voltage and a maximum reverse current of 10mA. This combination of features make it ideal for applications requiring high switching speeds and low on-resistance.

As far as its working principle is concerned, this power transistor basically works similar to other transistors. The transistor consists of three layers of semiconductor material – two of the layers are N-type, while the other one is P-type. These layers act as a switch for the current, depending on the voltage applied to the base. When there is no voltage applied to the base, the N-type semiconductor layer is in a state of high resistance, effectively blocking any current from passing through. However, when an appropriate voltage is applied to the base, the N-type layer begins to conduct electrons and thus allowing current to pass. This current controls the current running to and from the collector, making the transistor an ideal device for switching applications.

The BUK6Y32-60PX is an ideal power transistor for applications that require high switching speeds and low on-resistance. It is typically used in industrial instrumentation and automation applications, but it can also be used in other applications where the required performance and characteristics are met. It is important to note that the transistor should be connected and hooked up to the appropriate components and devices, as the proper care and handling should be taken when installing in order to ensure its optimal performance.

The specific data is subject to PDF, and the above content is for reference

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