
Allicdata Part #: | DMP3028LFDE-7DITR-ND |
Manufacturer Part#: |
DMP3028LFDE-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 30V 6.8A U-DFN2020-6 |
More Detail: | P-Channel 30V 6.8A (Ta) 660mW (Ta) Surface Mount U... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | U-DFN2020-6 (Type E) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 660mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1241pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 32 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.8A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMP3028LFDE-7 is a type-7 MOSFET from the DMP 3028L series. It is a single-channel, depletion-type device with an N-channel MOS field effect structure. It is made from an advanced Silicium-On-Sapphire technology with a very low on-resistance, resulting in improved performance for switch and amplifier applications.
Application Field
The DMP3028LFDE-7 is typically used as a high-frequency switch in applications such as RF circuit boards or cellular phones, where the low on-resistance allows for improved efficiency. Its ability to switch quickly and accurately is also useful in applications where high-speed digital logic is needed. In addition, its low switching voltage and low input capacitance make it useful for power management, allowing for minimization of wasted power through the system.
The device is also able to provide very good linearity performance and low distortion in audio systems as well as high-power RF systems. It is able to handle relatively small source and drain voltages with ease, allowing for better power conservation. This makes it ideal for applications such as car stereos, home theater systems, and other low-voltage, high-performance systems.
Working Principle
The DMP3028LFDE-7 is a power MOSFET device. It uses a metal-oxide-semiconductor field effect (MOSFET) structure, in which a conducting channel between the source and drain terminals is formed by the application of a gate voltage. The gate voltage controls the number of electrons that flow through the channel, and as such, the device can be used as an electronic switch.
In operation, the gate voltage controls the drain-source current, allowing the device to function as a switch. When the gate voltage is above a certain threshold, the channel becomes conductive and current can flow. As the gate voltage is increased further, the device can be used to regulate current and voltage in the form of linear amplification.
The DMP 3028LFDE-7 is a unique device in that it is able to provide very low on-resistance, which is beneficial for certain applications, particularly for high-frequency switching, where the low on-state resistance allows for greater efficiency. It is also able to provide very good linearity performance and low distortion in audio systems as well as high-power RF systems.
In conclusion, the DMP 3028LFDE-7 is a single-channel, N-channel depletion-type power MOSFET device that has a very low on-resistance, allowing for improved efficiency in high-frequency and low-voltage applications. It is also able to provide good linearity performance and low distortion in audio, high-power RF, and power management systems.
The specific data is subject to PDF, and the above content is for reference
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