Cap film 0.024uf 5% 2.5kvdc rad - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
UPA2735GR-E1-AT -ND	UPA2735GR-E1-AT	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 10V Power Dissipation (Max): 1.1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)	1000 Order	1+: $0
DMN67D7L-13-ND	DMN67D7L-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 210mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.821nC @ 10V Vgs (Max): 40V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power Dissipation (Max): 570mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	10000+: $0.0252
AON6566_MSI-ND	AON6566_MSI	Alpha & Omega Semiconductor Inc.	View more Series: AlphaMOS Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 29A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V Power Dissipation (Max): 6W (Ta), 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-VDFN Exposed Pad	1000 Order	1+: $0
1727-2570-2-ND	BUK9M120-100EX	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 119 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.05V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 882pF @ 25V Power Dissipation (Max): 44W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	1000 Order	1500+: $0.1522
IXTF1R4N450-ND	IXTF1R4N450	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4500V Current - Continuous Drain (Id) @ 25C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40 Ohm @ 50mA, 10V Vgs(th) (Max) @ Id: 6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Power Dissipation (Max): 190W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC Package / Case: i4-Pac-5 (3 Leads)	28 Order	1+: $43.2306 25+: $38.145
NTD4805N-1G-ND	NTD4805N-1G	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12.7A (Ta), 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 48nC @ 11.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 12V Power Dissipation (Max): 1.41W (Ta), 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
IPP052N06L3GXKS A1-ND	IPP052N06L3GXKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2.2V @ 58A Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 30V Power Dissipation (Max): 115W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	463 Order	1+: $1.0143 10+: $0.8984 100+: $0.71 500+: $0.5506 1000+: $0.4347
IAUT260N10S5N01 9ATMA1TR-ND	IAUT260N10S5N01 9ATMA1	Infineon Technologies	View more Series: OptiMOS-5 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 210A Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 11830pF @ 50V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	1000 Order	2000+: $1.5579
BS170RLRMGOSTB- ND	BS170RLRMG	ON Semiconductor	View more Packaging: Tape & Box (TB) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	1000 Order	1+: $0
SIR802DP-T1-GE3 TR-ND	SIR802DP-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 10V Power Dissipation (Max): 4.6W (Ta), 27.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	3000 Order	--
1727-7135-2-ND	BUK765R0-100E,1 18	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 11810pF @ 25V Power Dissipation (Max): 357W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $1.0131
DMT35M7LFV-13-N D	DMT35M7LFV-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1667pF @ 15V Power Dissipation (Max): 1.98W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	1000 Order	3000+: $0.1891
1727-2569-2-ND	BUK9M12-60EX	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 2769pF @ 25V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	4500 Order	--
ZVP2106ASTOB-ND	ZVP2106ASTOB	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	1000 Order	--
IXTQ200N06P-ND	IXTQ200N06P	IXYS	View more Series: PolarHT Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 400A, 15V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Power Dissipation (Max): 714W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	30+: $4.9755
SN7002NH6327XTS A1TR-ND	SN7002NH6327XTS A1	Infineon Technologies	View more Series: Automotive, AEC-Q101, SIPMOS Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 26A Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
1727-1793-2-ND	PSMN4R2-30MLDX	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 15V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 65W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	4500 Order	1500+: $0.1601
1727-5485-2-ND	BSP126,135	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 375mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	4000+: $0.1628
MMBF170TR-ND	MMBF170	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Power Dissipation (Max): 300mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	81000 Order	--
BS170-ND	BS170	ON Semiconductor	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Power Dissipation (Max): 830mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) Base Part Number: BS170	19671 Order	--
PSMN006-20K,518 -ND	PSMN006-20K,518	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 5 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 2.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 20V Power Dissipation (Max): 8.3W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
ZVP2106AS-ND	ZVP2106AS	Diodes Incorporated	View more Packaging: Bulk Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	1+: $0
IXTF280N055T-ND	IXTF280N055T	IXYS	View more Series: TrenchMV Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC Package / Case: i4-Pac-5	1000 Order	1+: $0
296-25644-2-ND	CSD16322Q5C	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 21A (Ta), 97A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 8V Vgs(th) (Max) @ Id: 1.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 1365pF @ 12.5V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SON Package / Case: 8-PowerTDFN	1000 Order	--
TSM2N7000KCTA3G TB-ND	TSM2N7000KCT A3 G	Taiwan Semiconductor Corporation	View more Packaging: Tape & Box (TB) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7.32pF @ 25V Power Dissipation (Max): 400mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	10000 Order	2000+: $0.0471
785-1310-2-ND	AON7423	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 28A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 5626pF @ 10V Power Dissipation (Max): 6.2W (Ta), 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3.3x3.3) Package / Case: 8-PowerWDFN	60000 Order	--
IXTP200N085T-ND	IXTP200N085T	IXYS	View more Series: TrenchMV Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Power Dissipation (Max): 480W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
DMN67D8L-7DITR- ND	DMN67D8L-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 210mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power Dissipation (Max): 340mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	9000 Order	3000+: $0.024
TSM2N60SCWRPGTR -ND	TSM2N60SCW RPG	Taiwan Semiconductor Corporation	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 600mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 25V Power Dissipation (Max): 2.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	5000 Order	2500+: $0.1721
DMP32D9UFZ-7BDI TR-ND	DMP32D9UFZ-7B	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 22.5pF @ 15V Power Dissipation (Max): 390mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN0606-3 Package / Case: 3-XFDFN	1000 Order	--
IXTF250N075T-ND	IXTF250N075T	IXYS	View more Series: TrenchMV Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC Package / Case: i4-Pac-5	1000 Order	1+: $0
IXTQ200N085T-ND	IXTQ200N085T	IXYS	View more Series: TrenchMV Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Power Dissipation (Max): 480W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	1+: $0
APTM20UM05SG-ND	APTM20UM05SG	Microsemi Corporation	View more Packaging: Bulk Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 317A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 158.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V Power Dissipation (Max): 1136W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: J3 Module	1000 Order	1+: $0
AON7202_101-ND	AON7202_101	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 20A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 15V Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3x3) Package / Case: 8-VDFN Exposed Pad	1000 Order	1+: $0
SIR418DP-T1-GE3 TR-ND	SIR418DP-T1-GE3	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 20V Power Dissipation (Max): 5W (Ta), 39W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	--
APTM10SKM05TG-N D	APTM10SKM05TG	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 278A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Power Dissipation (Max): 780W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	1000 Order	100+: $38.7475
IRLBA3803-ND	IRLBA3803	Vishay Siliconix	View more Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 179A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 71A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Power Dissipation (Max): 270W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-220 (TO-273AA) Package / Case: Super-220	1000 Order	1+: $0
MMBF170LT1OSTR- ND	MMBF170LT1	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Power Dissipation (Max): 225mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	565 Order	--
IXTH182N055T-ND	IXTH182N055T	IXYS	View more Series: TrenchMV Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 182A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V Power Dissipation (Max): 360W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	1000 Order	1+: $0
1727-1506-2-ND	PSMN011-60MSX	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1368pF @ 30V Power Dissipation (Max): 91W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	13500 Order	--

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